[14p-B6-1~15] 13.10 Compound solar cells

[14p-B6-10] Measurements of resistance across bonding interfaces in InGaP/GaAs/Si triple-junction cells

〇Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka City Univ.)

Keywords:multi junction solar cells, surface activated bonding, interface resistance

We fabricated InGaP/GaAs/Si n-on-p triple-junction (3J) cells with tap contacts on III-V bases and Si emitters. We measured potentials of these tap contacts while the 3J cells were in operation. We estimated the resistance across the bonding interfaces to be 89 ohm (~4 ohm cm²) from the relationships between the difference in potentials and the 3J-cell current.