Annealing effects of GaAs/ITO/Si junctions fabricated by surface-activated bonding

Presentation information

Oral presentation

13 Semiconductors » 13.10 Compound solar cells

Tue. Mar 14, 2017 1:15 PM - 5:15 PM B6 (B6)

4:00 PM - 4:15 PM

〇Tomoya Hara¹, Tomoki Ogawa¹, Jianbo Liang¹, Kenji Araki², Takefumi Kamioka², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.Toyota Technol Inst.)

Keywords:surface-activated bonding, ITO