2017年第64回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

9 応用物性 » 9.3 ナノエレクトロニクス

[14p-E206-1~11] 9.3 ナノエレクトロニクス

2017年3月14日(火) 13:45 〜 16:45 E206 (E206)

西口 克彦(NTT)、内藤 泰久(産総研)

15:45 〜 16:00

[14p-E206-8] Au Electroless-Plated Nanogap Electrodes on Pt Surface

〇(M1)Kwon Ain1、Choi Yoon Young1、Azuma Yasuo1、Majima Yutaka1 (1.Tokyo Tech.)

キーワード:Electroless gold plating, Pt

Single electron transistor (SET) that is a viable alternative for next-generation electronic devices, which enables electrical transport only by sequential changing of single electron. In addition, it is expected to operate room temperature with mass-production of bottom-up processes by using non-toxic materials. To establish this, it is important to fabricate a nanogap electrode as the platform of the devices. Our group have previously established the fabrication processes of electroless gold plated nanogap electrodes with less than 3 nm gap separation and 40 nm width of source/drain electrodes by using initial Au nanogap electrodes patterned by electron beam lithography[1].Here, we show the Au electroless plated nanogap electrodes on Pt electrodes’ surface. Platinum is more stable and hard material compared with gold[2]. We investigated pre-treatment solution process using acid which allows to form uniform Au electroless plating on Pt surface. This technique had big advantage for the preparation of robust nanogap electrodes, which allows to fabricate the narrow nanogap separation (1~3 nm) and small source/drain electrode widths (25 nm or less) as shown in Fig.1.