A positron-annihilation study of residual vacancies in <em>n</em>-type-doped Si after annealing

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal evaluation, impurities and crystal defects

Tue. Mar 14, 2017 1:45 PM - 5:30 PM F201 (F201)

Koji Sueoka(Okayama Pref. Univ.), Satoshi Nakano(Kyushu Univ.)

4:15 PM - 4:30 PM

〇Hiroki Kawai¹, Yusuke Higashi¹, Nakasaki Yasushi¹, Takamitsu Ishihara¹ (1.Toshiba R&D)

Keywords:Silicon vacancy, Positron annihilation spectroscopy, Ion implantation