Session information

Oral presentation

15 Crystal Engineering » 15.7 Crystal evaluation, impurities and crystal defects

[14p-F201-1~14] 15.7 Crystal evaluation, impurities and crystal defects

Tue. Mar 14, 2017 1:45 PM - 5:30 PM F201 (F201)

Koji Sueoka(Okayama Pref. Univ.), Satoshi Nakano(Kyushu Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[14p-F201-1] Efficient mapping using a data-driven approach (1)

Ryota Kikuchi¹, 〇Kentaro Kutsukake², Momoko Deura², Yutaka Ohno², Koji Shimoyama¹, Ichiro Yonenaga² (1.IFS, Tohoku Univ., 2.IMR, Tohoku Univ.)

2:00 PM - 2:15 PM

[14p-F201-2] Efficient mapping using a data-driven approach (2)

〇Kentaro Kutsukake¹, Ryota Kikuchi², Momoko Deura¹, Yutaka Ohno¹, Koji Shimoyama², Ichiro Yonenaga¹ (1.IMR, Tohoku Univ., 2.IFS, Tohoku Univ.)

2:15 PM - 2:30 PM

[14p-F201-3] Bulk lifetime of free carriers evaluated by parallel dual laser-beam technique: Evaluation of surface-state passivation by thermal oxide-film formation

〇Hiroshi Kaneta¹, Hideaki Yonezawa², Omura Ichirou¹ (1.Kyushu Inst. Tech., 2.Dpt. Ele. Eng. Kyushu Inst. Tech.)

2:30 PM - 2:45 PM

[14p-F201-4] Influence of Carrier Concentration on Bulk Lifetime in CZ-Si Crystal

〇Yoshiji Miyamura¹, Hirofumi Harada¹, Satoshi Nakano¹, Koichi Kakimoto¹ (1.Kyushu Univ.)

2:45 PM - 3:00 PM

[14p-F201-5] Development of quantitative analysis for carbon concentration in silicon crystal using photoluminescence spectroscopy after electron irradiation via luminescence activation

〇Satoko Nakagawa¹, Nagai Yuta¹ (1.GlobalWafers Japan)

3:00 PM - 3:15 PM

[14p-F201-6] Quantification of Carbon in Si by Photoluminescence at Liquid Nitrogen Temperature after Luminescence Activation

〇Michio Tajima¹, Hirotatsu Kiuchi¹, Fumito Higuchi¹, Atsushi Ogura¹ (1.Meiji University)

3:15 PM - 3:30 PM

△ [14p-F201-7] Determination of Low Carbon Concentration in Solar Cell CZ-Si by Liquid-Nitrogen-Temperature Photoluminescence after Electron Irradiation

〇Hirotatsu Kiuchi¹, Michio Tajima¹, Fumito Higuchi¹, Yoichiro Ishikawa¹, Atsushi Ogura¹ (1.Meiji Univ.)

3:45 PM - 4:00 PM

[14p-F201-8] Measurement of Low Carbon Concentration in Silicon Substrate Using DLTS and Room Temperature PL with Electron Beam Irradiation Pretreatment.

〇Kazutaka Eriguchi¹, Noritomo Mitsugi¹, Shuichi Samata¹ (1.SUMCO)

4:00 PM - 4:15 PM

[14p-F201-9] DLTS measurements of p/n junction implanted with boron ions to n type Si substrate

〇Hiroki Wakimoto¹, Haruo Nakazawa¹, Takashi Matsumoto², Yoichi Nabetani² (1.Fuji Electric, 2.Yamanashi Univ.)

4:15 PM - 4:30 PM

[14p-F201-10] A positron-annihilation study of residual vacancies in n-type-doped Si after annealing

〇Hiroki Kawai¹, Yusuke Higashi¹, Nakasaki Yasushi¹, Takamitsu Ishihara¹ (1.Toshiba R&D)

4:30 PM - 4:45 PM

[14p-F201-11] Defect reactions of hydrogen impurity with Cu₄ complex in silicon

〇Koun Shirai¹, Takayoshi Fujimura¹ (1.ISIR, Osaka Univ.)

4:45 PM - 5:00 PM

[14p-F201-12] Ground-State Splitting of Ultrashallow Thermal Donors in Si Crystals

〇Akito Hara¹, Teruyoshi Awano¹ (1.Tohoku Gakuin Univ.)

5:00 PM - 5:15 PM

[14p-F201-13] Measurement of carbon concentration in silicon crystal(Ⅹ)Procedure down to 10¹⁴cm^-3

〇Naohisa Inoue^1,2, Kawamura Yuichi² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

5:15 PM - 5:30 PM

[14p-F201-14] Sensitivity and detection limit of carbon concentration measurement in silicon crystal
(2) Incorrect Detection limit

〇Naohisa Inoue¹ (1.Research integrity study Group)

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