The 64th JSAP Spring Meeting, 2017

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15 Crystal Engineering » 15.7 Crystal evaluation, impurities and crystal defects

[14p-F201-1~14] 15.7 Crystal evaluation, impurities and crystal defects

Tue. Mar 14, 2017 1:45 PM - 5:30 PM F201 (F201)

Koji Sueoka(Okayama Pref. Univ.), Satoshi Nakano(Kyushu Univ.)

5:00 PM - 5:15 PM

[14p-F201-13] Measurement of carbon concentration in silicon crystal(Ⅹ)Procedure down to 1014cm-3

〇Naohisa Inoue1,2, Kawamura Yuichi2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Keywords:silicon crystal, carbon concentration measurement, infrared absorption

We have developed IR measurement procedure and opened to main crystal and machine vendors and measurement service companies down to 5E+14cm-3 and cross checked the SIMS and CPAA. Here we show the sysnthetic reference samples for IR by electron irradiation and measurement procedure down to 1E+14cm-3 and international collaboration.