[14p-F201-1~14] 15.7 Crystal evaluation, impurities and crystal defects

[14p-F201-9] DLTS measurements of p/n junction implanted with boron ions to n type Si substrate

〇Hiroki Wakimoto¹, Haruo Nakazawa¹, Takashi Matsumoto², Yoichi Nabetani² (1.Fuji Electric, 2.Yamanashi Univ.)

Keywords:pin diode, leakage current, Arrhenius plot

For pin diodes implanted and activated with boron ions into a high specific resistance n type Si substrate, it was found that there was a large difference in leakage current by the method of activation of the p layer. Since the trap state density in the vicinity of the p + / n - junction is supposed to be affected, we report on the DLTS mesurement results investigating what kinds of trap levels are formed.