[14p-P1-1~25] 8 Plasma Electronics（Poster）

[14p-P1-13] Dynamic behavior of radical deposition rate and amount of cluster incorporation into a-Si:H in the downstream region of multi-hollow discharge plasma CVD

〇Susumu Toko¹, Takashi Kojima¹, Kimitaka Keya¹, Kazuma Tanaka¹, Hyunwoohg Seo¹, Naho Itagaki¹, Kazunori Koga¹, Masaharu Shiratani¹ (1.Kyushu Univ.)

Keywords:hydrogenated amorphous silicon solar cell, plasma CVD, nanoparticle