[14p-P10-1~98] 10 Spintronics and Magnetics（Poster）

[14p-P10-6] Simulation of Anisotropic Magnetoresistance Effect at Finite Temperature in GaAs/GaMnAs Superlattice Structure

〇Hayato Asano¹, Daiki Nozaki¹, Shigeru Kaku¹, Junji Yoshino¹ (1.Tokyo Tech, Dept. Phys.)

Keywords:Ferromagnetic Semiconductor, Anisotropic Magnetoresistance

In the GaMnAs/GaAs Superlattice (SL) structure, an experimental results has been reported: the anisotropy of electric conduction varies depending on the film thickness of the GaMnAs layer, however, its origin is unknown. In order to elucidate them, we performed simulation of transport coefficients which is based on electric state calculation by kp perturbation method and semi-classical Boltzmann transport theory. Comparing with experimental results and simulation, we discussed the validity of the model. In this research, we extended the previous study and performed the simulation of the transport coefficients at finite temperature.