[14p-P4-1~78] 17 Nanocarbon Technology（Poster）

[14p-P4-26] Growth of Graphene from Decomposition of SiC Controlled by Ar Flow Rate

〇Tomoo Terasawa¹, Wataru Norimatsu², Michiko Kusunoki¹ (1.IMaSS, Nagoya Univ., 2.Sch. of Eng., Nagoya Univ.)

Keywords:graphene, SiC, step

During the decomposition of SiC (0001) surfaces, the “finger” structures of bilayer graphene protrude to the terraces of SiC, induced by the instable steps of SiC. In this study, we show the suppression of the "finger" structure by controlling the Ar flow rate during the growth. In the presentation, we discuss the dependence of the stability of SiC steps and the growth temperature on the Ar flow rate.