[14p-P8-1~10] 3.13 Semiconductor optical devices

[14p-P8-2] Low temperature lasing characteristics of GaInAsP laser diode on wafer bonded InP/Si substrate

〇Kazuki Uchida¹, Tetsuo Nishiyama¹, Naoki Kamada¹, Yuya Onuki¹, Xu Han¹, Gandhi Kallarasan Periyanayagam¹, Hirokazu Sugiyama¹, Masaki Aikawa¹, Natsuki Hayasaka¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:laser