[15a-301-8~8] 8.9 Plasma Electronics Invited Talk

[15a-301-8] [INVITED] Computational analyses of chemical reactions in gas phase and on surface in process plasmas

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

Keywords:Semiconductor process, Dry process, Electron impact dissociation

Plasma process technologies for fabrication of very large integrated circuits (VLSI) have been successfully developed on the basis of understanding of electron-induced decompositions and chemical reactions. It has not however discussed sufficiently, with the reaction mechanism in the gas phase and on the surface in the etching process. Therefore, the reaction mechanisms have been investigated in details using computational chemistry. A variety of the calculated results for the reaction mechanisms (electron impact dissociations and reactions of molecules and atoms) in the gas phase and on the surfaces for fundamental process gases will be discussed in this lecture.