The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

12 Organic Molecules and Bioelectronics » 12.4 Organic light-emitting devices and organic transistors

[15a-302-1~10] 12.4 Organic light-emitting devices and organic transistors

Wed. Mar 15, 2017 9:00 AM - 11:45 AM 302 (302)

Toshinori Matsushima(Kyushu Univ.), Masatoshi Sakai(Chiba University)

9:45 AM - 10:00 AM

[15a-302-4] Centrifugal Coated Quasi-2D CsPb2Br5 Emitter Layer for Perovskite Light-Emitting Diodes and Lasing

Chuanjiang Qin1,2, Toshinori Matsushima1,2, Atura. S. D Sandanayaka1,2, Chihaya Adachi1,2 (1.OPERA Kyushu Univ., 2.JST ERATO)

Keywords:perovskite, light-emitting diode, lasing

Low-cost and room-temperature solution-processed inorganic two dimensional perovskites with strong exciton binding energy, chemistry stability, and color-tunable photoluminescence are promising for light-emitting diodes (LEDs) and laser application. However, efficient pure inorganic quasi-2D perovskite based PeLEDs have not been realized yet. Here centrifugal-coated quasi-2D CsPb2Br5 films from nanocrystal colloidal are successfully developed. This technique allows for the formation of very thin continuous layers of high-quality quasi-2D CsPb2Br5 which is challenging for traditional spin-coating methods. Through thickness control process and without additional treatment, we obtained a compact and uniform CsPb2Br5 emitter layer with a photoluminescence quantum yield of 35% and demonstrated perovskite LEDs with good external quantum efficiency of 2.6%. We in-situ studied the carrier traps of complete CsPb2Br5 based LEDs and observed two types of traps using thermally stimulated current technique. Further, a random lasing from centrifugal-coated quasi-2D CsPb2Br5 film was also demonstrated with a promising low threshold.