The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[15a-304-1~10] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Wed. Mar 15, 2017 9:00 AM - 11:30 AM 304 (304)

Minoru Sasaki(Toyota Tech. Inst.)

9:45 AM - 10:00 AM

[15a-304-4] Pt etching under hexafluoroacetylacetone chemistry

Eiichi Kondoh1, Yuta Ogihara1 (1.Univ. Yamanashi)

Keywords:Pt, etching

Pt electrodes are commonly used in MRAMs and FeRAMs. In recent MRAM processes, removal of etch residue or non-volatile compounds, which contain Pt and ferromagnetic metals, are of crucial issues. We have developed a novel method of etching transition metals such as Fe, Co, and Cu by using hexafluoroacetylacetone in supercritical carbon dioxide. In this paper the success of Pt etching is reported.