[15a-313-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[15a-313-4] Formation of low density InAs/GaAs quantum dots by controlling partial capping process: suppression of background emission by controlling partial capping thickness

〇Masahiro Kakuda¹, Yasutomo Ota¹, Kazuhiro Kuruma², Katsuyuki Watanabe^1,2, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine, 2.IIS, The Univ. of Tokyo)

Keywords:molecular beam epitaxy