[15a-313-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[15a-313-5] Improvements of InAs/GaAs quantum-dot multiple layers by introducing GaAsP layers

〇Katsuyuki Watanabe^1,2, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.IIS, Univ. of Tokyo, 2.NanoQuine, Univ. of Tokyo)

Keywords:quantum dots, indium arsenide, strain compensation

We have fabricated InAs quantum-dot closely-stacked structures up to 50 layers on GaAs substrates by MBE. We have obtained significant improvements in the crystal quality of the structures by introducing GaAsP layers.