〇(M2)Joohang Lee¹, Jinkwan Kwoen², Takeo Kageyama², Katsuyuki Watanabe¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.IIS, Univ. of Tokyo, 2.NanoQuine, Univ. of Tokyo)

〇Takeo Kageyama¹, Katsuyuki Watanabe², Keizo Takemasa³, Mitsuru Sugawara³, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine Univ Tokyo, 2.IIS, Univ Tokyo, 3.QD Laser)

〇(D)Zon Zon^1,4, Supachok Thainoi¹, Suwit Kiravittaya², Aniwat Tandaechanurat³, Somsak Panyakeow¹, Yasutomo Ota⁴, Satoshi Iwamoto⁴, Yasuhiko Arakawa⁴ (1.Semiconductor Device Research Laboratory (SDRL), Chulalongkorn University, Bangkok, Thailand, 2.Advanced Optical Technology (AOT) Laboratory, Naresuan University, Phitsanulok, Thailand, 3.International School of Engineering (ISE), Chulalongkorn University, Bangkok, Thailand, 4.Institute for Nano Quantum Information Electronics and Institute of Industrial Science, The University of Tokyo, Tokyo, Japan)

〇Masahiro Kakuda¹, Yasutomo Ota¹, Kazuhiro Kuruma², Katsuyuki Watanabe^1,2, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine, 2.IIS, The Univ. of Tokyo)

〇Katsuyuki Watanabe^1,2, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.IIS, Univ. of Tokyo, 2.NanoQuine, Univ. of Tokyo)

〇Toshiyuki Kaizu^1,2, Yusuke Tajiri¹, Takashi Kita¹ (1.Grad. Sch. of Eng., Kobe Univ.., 2.CSREA, Kobe Univ.)

〇yuma hayashi¹, Nobuhiko Ozaki¹, Shunsuke Ohkouchi², Naoki Ikeda³, Yoshimasa Sugimoto³ (1.Wakayama Univ., 2.NEC, 3.NIMS)

〇Yasuhiro Ogawa¹, Yukihiro Harada¹, Toshiyuki Kaizu¹, Takashi Kita¹ (1.Kobe Univ.)

〇Yilun He^1,2, Naoya Miyashita², Yoshitaka Okada^1,2 (1.Univ. of Tokyo, 2.RCAST)

〇Takuo Sasaki¹, Masamitu Takahasi¹ (1.QST)

〇Tomonori Ito¹, Ryo Kaida¹, Toru Akiyama¹, Kohji Nakamura¹ (1.Mie Univ.)