The 64th JSAP Spring Meeting, 2017

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[15a-313-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Mar 15, 2017 9:00 AM - 12:00 PM 313 (313)

Nobuhiko Ozaki(Wakayama Univ.)

11:15 AM - 11:30 AM

[15a-313-9] Background Carrier and Atomic-H Irradiation on Ga(In)NAs Thin Films by H-MBE

〇Yilun He1,2, Naoya Miyashita2, Yoshitaka Okada1,2 (1.Univ. of Tokyo, 2.RCAST)

Keywords:III-V semiconductor, Dilute nitride, Molecular beam epitaxy