[15a-315-1~10] 13.8 Compound and power electron devices and process technology

[15a-315-3] Fe concentration dependence on characteristics of AlGaN/GaN HEMT fabricated on Fe-doped GaN templates using Hydride Vapor Phase Epitaxy

〇Takanori Nishihira¹, Naoki Arita¹, Kohei Sugimoto^1,2, Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.Ube Indust.)

Keywords:AlGaN/GaN, Fe doped GaN