[15a-315-1~10] 13.8 Compound and power electron devices and process technology

[15a-315-4] Temperature dependence of carrier concentration and mobility in InN grown by MBE

〇(PC)Kazuki Kodama¹, Jan Kuzmik², Alexandros Georgakilas³, Masaaki Kuzuhara¹ (1.Fukui Univ., 2.SAV, 3.Crete Univ.)

Keywords:InN, Hall effect measurement, temperature dependence

Due to low electron effective mass and high electron velocity, InN has been of great interests for applications in high frequency and high speed operations. In fact, InN grown by MBE and MOCVD shows higher Hall mobility than GaN. However, there are few reports on temperature dependence of mobility in InN. In this work, temperature dependence of carrier concentration and mobility were measured, suggesting that two shallow donors exist. Furthermore, comparison between experimental and theoretical mobility revealed that dislocation scattering dominants the mobility.