[15a-315-1~10] 13.8 Compound and power electron devices and process technology

[15a-315-5] Junction barrier Schottky diodes with a thin p⁺-GaN layer fabricated on free-standing GaN substrate

〇(M1)Kentarou Hayashi¹, Hirofumi Tsuge¹, Hiroshi Ohta¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tohru Nakamura¹, Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

Keywords:Gallium Nitride, Junction barrier Schottky diodes

Junction barrier Schottky (JBS) diodes were fabricated using simple epitaxial layer structures of p+GaN(10-20 nm, Mg=2e20 cm-3)/n-GaN/n-GaN substrate. This structure enables easy fabrication of JBS by shallow trench-formation processing. The JBS operation was confirmed by electroluminescence imaging.