Kentarou Hayashi

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Speaker, Author, Co-Author

Wed. Mar 15, 2017 9:00 AM - 11:45 AM 315 (315)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[15a-315-1~10] 13.8 Compound and power electron devices and process technology

10:00 AM - 10:15 AM

[15a-315-5] Junction barrier Schottky diodes with a thin p<sup>+</sup>-GaN layer fabricated on free-standing GaN substrate

〇(M1)Kentarou Hayashi¹, Hirofumi Tsuge¹, Hiroshi Ohta¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tohru Nakamura¹, Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

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