[15a-419-1~10] 6.3 Oxide electronics

▲ [15a-419-7] n-Cu₂O/p-Cu_xS Thin Film Heterostructures for Solar cells

〇KMD Charith Jayathilaka^1,2, L.S.R. Kumara³, C.H. Song³, Shinji Kohara³, Osami Sakata³, Withana Siripala¹, J. K. D. S. Jayanetti² (1.Univ. of Kelaniya, 2.Univ. of Colombo, 3.NIMS/SPring-8)

Keywords:Cuprous Oxide, Sulphidation, Electrodeposition

In this study, the n-type cuprous oxide films were electrodeposited potentiostaticaly on Ti substrate in acetate bath. A Junction of Cu₂O/Cu_xS was formed by partially sulphiding the Cu₂O films using an aqueous sodium sulphide solution. Resulting Ti/Cu₂O/Cu_xS/Au solar cell structure produced V_oc = 520 mV and J_sc= 11.4 mAcm^-2, under AM 1.5 illumination. The obtained cell yielded a power conversion efficiency of 3.64%, which to the best of our knowledge is the highest reported efficiency for electrodeposited Cu₂O based solar cells.