Oral presentation

[14a-419-1~10] 6.3 Oxide electronics

Tue. Mar 14, 2017 9:00 AM - 11:30 AM 419 (419)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [14a-419-1] Analysis of valence electron state in resistance change region of rutile TiO2 single crystals memristor

〇Kengo Yamaguchi¹, Shotaro Takeuchi¹, Akira Sakai¹, Nobuyuki Ikarashi² (1.Osaka Univ., 2.Nagoya Univ.)

9:15 AM - 9:30 AM

△ [14a-419-2] Repetition characteristics of resistive switching by the control of oxygen vacancy distribution in rutile type TiO₂ single crystals

〇Takuma Shimizu¹, Takeuchi Shotaro¹, Akira Sakai¹ (1.Osaka Univ.)

9:30 AM - 9:45 AM

△ [14a-419-3] Evaluation of TiO_x ReRAM fabricated by reactive sputtering

〇Taiji Fukumoto¹, Reon Katsumura¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Hokkaido Univ.)

9:45 AM - 10:00 AM

△ [14a-419-4] In-situ observation of Cu movement in MoO_x/Al₂O₃ double layer CBRAM during cyclic switching process

Shuichiro Hirata¹, 〇ryusuke ishikawa¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹, Masaki Kudo², Syo Matsumura² (1.Hokkaido Univ., 2.Kyushu Univ.)

10:00 AM - 10:15 AM

△ [14a-419-5] Evaluation of multilevel memory characteristics of Ta₂O₅ ReRAM using different top electrode

Reon Katsumura¹, 〇Yuanlin Li¹, Mika Gronroos¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹, Hideyuki Andoh², Takashi Morie² (1.Hokkaido Univ., 2.Kyushu Inst. Tech.)

10:15 AM - 10:30 AM

[14a-419-6] Analog memory operation of parallel connected Cu-MoO_x-Al resistance change memory

〇Masataka Harada¹, Hideyuki Ando¹, Takashi Morie¹, Reon Katsumura², Atsushi Fukuchi², Masashi Arita², Yasuo Takahashi² (1.Kyushu Inst. Tech., 2.Hokkaido Univ.)

10:30 AM - 10:45 AM

△ [14a-419-7] The enhancement of electronic phase switching efficiency in VO₂ freestanding nanowires

〇Yoshiyuki Higuchi¹, Teruo Kanki¹, Hidekazu Tanaka¹ (1.ISIR Osaka Univ.)

10:45 AM - 11:00 AM

△ [14a-419-8] True Vapor–Liquid–Solid Process Prevents Unintentional Doping
of Single Crystalline Metal Oxide Nanowires

〇Hiroshi Anzai¹, Kazuki Nagashima², Masaru Suzuki², Zetao Zhu¹, Masaki Kanai², Yong He², Guozhu Zhang², Katsuichi Kanemoto³, Takehito Seki⁴, Naoya Shibata⁴, Takeshi Yanagida^1,2 (1.Kyushu Univ., 2.IMCE, Kyushu Univ., 3.Osaka city Univ., 4.Univ. of Tokyo.)

11:00 AM - 11:15 AM

△ [14a-419-9] Strain effect on Li⁺ ionic conduction in Li_3xLa_2/3-xTiO₃: molecular dynamics simulation

〇Koki Kawahara¹ (1.Univ. of Tokyo)

11:15 AM - 11:30 AM

▼ [14a-419-10] Electrochemical Deposition of Lithium Phosphate Films for Battery Applications

〇(P)Raman V Bekarevich¹, Yuriy Pihosh², Kazutaka Mitsuishi¹, Tsuyoshi Ohnishi¹, Takahisa Ohno¹, Kazunori Takada¹ (1.NIMS, 2.Tokyo Univ.)

Oral presentation

[14p-419-1~16] 6.3 Oxide electronics

Tue. Mar 14, 2017 1:30 PM - 6:00 PM 419 (419)

Atsushi Fukuchi(北大), Yusuke Kozuka(東大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[14p-419-1] [Kashiko Kodate Award Speech] Origin of ferromagnetism at the charge-transfer interface of transition-metal oxides

〇Miho Kitamura¹ (1.KEK)

2:00 PM - 2:15 PM

△ [14p-419-2] Electric field modulation of delta-doped SrTiO₃ interfaces

〇JIYEON LEE¹, Ryota Takahashi^1,2, Mikk Lippmaa¹ (1.ISSP, Univ. of Tokyo, 2.JST PRESTO)

2:15 PM - 2:30 PM

△ [14p-419-3] NC-AFM study of a SrTiO₃(100)-(√13×√13)-R33.7^o reconstructed surface

〇Ryota Shimizu¹, Yoshiaki Sugimoto², Kazuto Akagi³, Masayuki Abe⁴, Seizo Morita⁵, Taro Hitosugi^1,3 (1.Tokyo Tech., 2.Univ. of Tokyo, 3.Tohoku Univ., 4.Osaka Univ., 5.ISIR)

2:30 PM - 2:45 PM

[14p-419-4] Imaging of LaAlO₃(100) film surface using combined system of pulsed laser deposition and non-contact atomic force microscopy

〇daiki katsube¹, Hayato Yamashita^1,2, Satoshi Abo¹, Fujio Wakaya¹, Masayuki Abe¹ (1.Osaka Univ., 2.JST PRESTO)

2:45 PM - 3:00 PM

△ [14p-419-5] Magnetic imaging of p-type SrTiO₃ by laser-excited photoemission electron microscopy

〇Junpei Kawakita¹, Kairi Morozumi¹, Yoshihito Motoyui¹, Toshiyuki Taniuchi¹, Shik Shin¹ (1.ISSP, Univ. of Tokyo)

3:00 PM - 3:15 PM

△ [14p-419-6] Magnetic Domain and Electronic structure of LaAlO₃/CaTiO₃Interface Observed by Laser-excited Photoelectron Emission Microscopy

〇Yoshihito Motoyui¹, Xiuyi Hou¹, Kairi Morozumi¹, Toshiyuki Taniuchi¹, Ryota Takahashi¹, Mikk Lippmaa¹, Shik Shin¹ (1.ISSP, the university of Tokyo)

3:15 PM - 3:30 PM

△ [14p-419-7] Reversible control of resistance of NdNiO₃ thin film through topotactic fluorination/oxygen annealing

〇(DC)Tomoya Onozuka¹, Akira Chikamatsu¹, Tsukasa Katayama¹, Yasushi Hirose^1,2, Isao Harayama³, Daiichiro Sekiba³, Eiji Ikenaga⁴, Makoto Minohara⁵, Hiroshi Kumigashira⁵, Tetsuya Hasegawa^1,2 (1.Univ. of Tokyo, 2.KAST, 3.UTTAC, 4.JASRI, 5.KEK-PF)

3:30 PM - 3:45 PM

△ [14p-419-8] Giant Inductance in Nonlinear Conductor

〇Kenji Tanabe¹, Hiroki Taniguchi¹, Fumihiko Nakamura², Ichiro Terasaki¹ (1.Nagoya Univ., 2.Kurume Inst. of Tech.)

4:00 PM - 4:15 PM

△ [14p-419-9] Impact of epitaxial strain for electrical properties of perovskite vanadates

〇Hirokazu Okabe¹, Kohei Yoshimatsu¹, Akira Ohtomo^1,2 (1.Tokyo Tech., 2.MCES.)

4:15 PM - 4:30 PM

△ [14p-419-10] Epitaxial growth and physical properties of β-pyrochlore-type CsW₂O₆ films

〇Takuto Soma¹, Kohei Yoshimatsu¹, Akira Ohtomo^1,2 (1.Tokyo Tech., 2.MCES)

4:30 PM - 4:45 PM

△ [14p-419-11] Cation off-stoichiometry in PLD-grown (Ba,La)SnO₃ thin films and its influence on their transport properties

〇Yusuke Ozaki¹ (1.ICR Kyoto Univ.)

4:45 PM - 5:00 PM

[14p-419-12] Electrical properties of (Ba,La)SnO₃ epitaxial films

〇Kohei Miura¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Fujimura Norifumi¹ (1.Osaka Pref. Univ.)

5:00 PM - 5:15 PM

△ [14p-419-13] Fabrication of flat surface ZION films on lattice mismatched substrate by RF magnetron sputtering

〇Nanoka Miyahara¹, Koichi Matsushima¹, Hyunwoong Seo¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki¹ (1.Kyushu Univ.)

5:15 PM - 5:30 PM

[14p-419-14] Zn-In-O-N (ZION) films deposited by reactive co-sputtering

〇Tomohiko Hara¹, Junjun Jia¹, Shin-ichi Nakamura¹, Yuzo Shigesato¹ (1.Aoyama Gakuin Univ.)

5:30 PM - 5:45 PM

△ [14p-419-15] Study of thermal oxide films for the application to metal separator of fuel cell

〇Masafumi Ono¹, Kentaro Kaneko¹, Sizuo Fujita¹ (1.Kyoto Univ.)

5:45 PM - 6:00 PM

△ [14p-419-16] Pulsed laser deposition of LaAlO₃ thin films on SrTiO₃(100) substrate using the 5th harmonic of Nd:YAG laser (wavelength of 213 nm)

〇(B)Naoto Nakamura¹, Issei Sugiyama¹, Shimizu Ryota¹, Hitosugi Taro^1,2 (1.Tokyo Tech, 2.Tohoku Univ.)

Oral presentation

[15a-419-1~10] 6.3 Oxide electronics

Wed. Mar 15, 2017 9:00 AM - 11:30 AM 419 (419)

Ryota Shimizu(東工大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[15a-419-1] Growth of ZnO nanorods on Al-doped ZnO seed layer

Toshiki Kokubun¹, Albertus Bramantyo², Masayuki Okuya³, 〇Kenji Murakami³ (1.Shizuoka Univ., 2.GSST Shizuoka Univ., 3.GSIST Shizuoka Univ.)

9:15 AM - 9:30 AM

▲ [15a-419-2] Synthesis and Characterization of ZnO and Al Doped ZnO Nanostructures by Using Advanced Spray Pyrolysis Deposition Technique

Sameera Attanayake¹, Ajith Bandara¹, Masayuki Okuya², 〇Kenji Murakami² (1.GSST, Shizuoka Univ., 2.GSIST, Shizuoka Univ)

9:30 AM - 9:45 AM

[15a-419-3] Impacts of Air Exposure of Sputter-Deposited ZnO Films on Electrical Characteristics

〇Naoto Takahashi¹, Jiesheng Zhang¹, Tadashi Saitoh¹, Shingo Sato¹, Yasuhisa Omura¹ (1.Kansai University)

9:45 AM - 10:00 AM

[15a-419-4] Cu₂O film formation by hydrolysis method at room temperature

〇Shohei Ohyama¹, Masahito Watanabe¹, Takuya Hiyama², Ryo Yokogawa², Atsushi Ogura² (1.Gakushuin Univ., 2.Meiji Univ.)

10:00 AM - 10:15 AM

[15a-419-5] Electrochemically deposited Cu₂O/ZnO heterojunction film and its application to photorechargeable battery

〇Takeru Saisho¹, Daiki Maeda¹, Tetsuya Ageno¹, Teruaki Nomiyama¹, YUji Horie¹, Akira Kokekuchi² (1.Kagoshima Univ., 2.Takata Corporation)

10:15 AM - 10:30 AM

[15a-419-6] Preparation of Cu₂O heterojunction solar cells using sputtered n-type oxide semiconductor thin films

〇Kyosuke Watanabe¹, Jouji Yamazaki¹, Toshihiro Miyata¹, Tadatsugu Minami¹ (1.OEDS R&D Center, K I T)

10:30 AM - 10:45 AM

▲ [15a-419-7] n-Cu₂O/p-Cu_xS Thin Film Heterostructures for Solar cells

〇KMD Charith Jayathilaka^1,2, L.S.R. Kumara³, C.H. Song³, Shinji Kohara³, Osami Sakata³, Withana Siripala¹, J. K. D. S. Jayanetti² (1.Univ. of Kelaniya, 2.Univ. of Colombo, 3.NIMS/SPring-8)

10:45 AM - 11:00 AM

[15a-419-8] Photovoltaic Properties of CdSe Quantum Dot Sensitized Solar Cell with Modified TiO₂ Nanorod Electrodes by ZnO

〇(M2)satoshi kaji¹, Shuhei Ozu¹, Yukiko Kitabatake², Taro Toyoda^1,4, Yuhei Ogomi^3,4, Shuzi Hayase^3,4, Qing Shen^1,4 (1.Univ. Electro-Commun., 2.Chuo Univ, 3.Kyusyu Inst. Tech., 4.JST CREST)

11:00 AM - 11:15 AM

[15a-419-9] Photo-generated carrier dynamics in TiO₂ films with different crystal structure

〇Natsuko Sato¹, Ayumu Iguchi¹, Hiroki Takezawa¹, Yuri Arai¹, Naoki Shimosako¹, Hiroshi Sakama¹, Kazuhiro Ema¹, Hideyuki Kunugita¹ (1.Sophia Univ.)

11:15 AM - 11:30 AM

[15a-419-10] Evaluation of photocatalytic activity of iron oxide nanostructures under vacuum with various amount of platinum

〇Takahiro Ohta¹, Noda Kei¹ (1.Keio Univ.)

Poster presentation

[15p-P3-1~26] 6.3 Oxide electronics

Wed. Mar 15, 2017 1:30 PM - 3:30 PM P3 (BP)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[15p-P3-1] Giant positive magnetoresistance of EuNbO₃thin films grown on SrTiO₃and KTaO₃ substrates

〇Takahiro Maruyama¹, Akira Chikamatsu¹, Tomoya Onozuka¹, Keisuke Yamada¹, Tetsuya Hasegawa^1,2 (1.Univ. of Tokyo, 2.KAST)

1:30 PM - 3:30 PM

[15p-P3-2] Fabrication of BiFeO₃ thin films by Atomic Layer Deposition

〇(M1C)Mitsuhiro Hirabayashi¹, Aoi Nakamura¹, Shanghao Zha¹, Naoki Shimosako¹, Hiroshi Sakama¹ (1.Sophia Univ.)

1:30 PM - 3:30 PM

[15p-P3-3] Effect of CuO additive on electrical properties of bulk and thick-film CaCu₃Ru₄O₁₂

〇Akihiro Tsuruta¹, Masashi Mikami¹, Yoshiaki Kinemuchi¹, Ichiro Terasaki^1,2, Norimitsu Murayama¹, Woosuck Shin¹ (1.AIST, 2.Nagoya Univ.)

1:30 PM - 3:30 PM

[15p-P3-4] Characterization of Electrolytes thin films for SOFC using MOD method

〇Yuuki Takenaka¹, Hideki Yoshioka², Takahiko Ban¹, Shin-Ichi Yamamoto¹ (1.Ryukoku Univ., 2.Hyogo Prefectural Institute of Technology)

1:30 PM - 3:30 PM

[15p-P3-5] Production of LaMnO₃thin films by Metal Organic Deposition (MOD) method and their electrical- and magneto-conduction properties

〇Toru Kitamura¹, Miku Yumoto¹, Hiromi Kobori¹, Atsushi Yamasaki¹, Toshifumi Taniguchi², Tetsuo Shimizu³ (1.Konan Univ., 2.Osaka Univ., 3.NRI-AIST)

1:30 PM - 3:30 PM

[15p-P3-6] Fabrication of Ta₂O₅ Thin Film by Wet Process & Application to Resistive Memory

〇Masataka Higashi¹, Takahiko Ban¹, Shin-Ichi Yamamoto¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[15p-P3-7] p-Cu₂O/SiN_x/n-SiC/n-Si-Structured Resistive Nonvolatile Memory Diode

〇Akihiro Somura¹, Takahiro Tsukamoto¹, Itaru Kato², Akihiro Saiga², Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. & Technol., 2.NIT, Tokyo College)

1:30 PM - 3:30 PM

[15p-P3-8] Study of low voltage switching in Cu/Ti/ HfO₂/Au resistive switching memory

〇Hayato Yoshida¹, Tomohiro Shimizu¹, Takeshi Ito¹, Shoso Shingubara¹ (1.Kansai Univ.)

1:30 PM - 3:30 PM

[15p-P3-9] Characteristic control of nonvolatile pn memory diodes with SiC_xO_y or SiO_xas electron trap layer

〇Misa Tsuchiya¹, Takahiro Tsukamoto¹, Itaru Kato², Akihiro Saiga², Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. & Technol., 2.NIT, Tokyo College)

1:30 PM - 3:30 PM

[15p-P3-10] Improvement of resistive switching characteristics by multilayer ReRAM

〇Katsuyuki Ochiai¹, Kouki Kawano¹, Kentaro Kinoshita^1,2 (1.Tottori Univ., 2.TiFREC)

1:30 PM - 3:30 PM

[15p-P3-11] Fabrication of NiO nanowire for resistive switching random access memory

〇(M1)Takashige Aono¹, Tadataka Watanabe², Yoshiki Takano², Kouichi Takese² (1.Graduate School of Nihon Univ., 2.Nihon Univ.)

1:30 PM - 3:30 PM

[15p-P3-12] Investigation on Physical Properties of Low Temperature Grown VLS Oxide Nanowires

Zetao Zhu¹, Kazuki Nagashima¹, Yoshida Hideto³, Hiroshi Anzai², Daiki Sakai², Akihide Inoue², Chie Nakamura², Masaki Kanai¹, He Yong¹, Takeda Seiji³, 〇Takeshi Yanagida^1,2 (1.IMCE Kyushu Univ., 2.Eng. Sci. Kyushu Univ., 3.Osaka Univ.)

1:30 PM - 3:30 PM

[15p-P3-13] Multi step oscillations in VO₂/TiN/Ti/Si layered structure device

〇Tomohiro Aoto¹, Kenta Sato¹, Md. Suruz Mian¹, Kunio Okimura¹ (1.Tokai Univ.)

1:30 PM - 3:30 PM

[15p-P3-14] Epitaxial growth of VO₂ films on sapphire substrates

〇Takeshi Kusumori¹, Setsuo Nakao¹ (1.AIST)

1:30 PM - 3:30 PM

[15p-P3-15] Layered-structure deposition of VO₂ on Al doped ZnO transparent conductive film and its transition properties

〇Kenta Sato¹, Hiroaki Hoshino¹, Md. Suruz Mian¹, Kunio Okimura¹, Yoshio Yasumori² (1.Tokai Univ., 2.Tokai Univ. Ctr. Educ. Res.)

1:30 PM - 3:30 PM

[15p-P3-16] Low temperature growth of Al-doped ZnO thin films by substrate biased sputtering

〇(M1)Kazuki Yuzurihara¹, Kenta Sato¹, Hiroaki Hoshino¹, Kunio Okimura¹, Yoshio Yasumori² (1.Tokai Univ., 2.Tokai Univ. Ctr. Educ. Res. Dev.)

1:30 PM - 3:30 PM

[15p-P3-17] Electrochemical growth of ZnO thin films and control of grain morphology

〇Takeshi Imanishi¹, Atsushi Ashida¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

1:30 PM - 3:30 PM

[15p-P3-18] Fabrication and Characterization of MIS Type Self-Switching Diodes Using Zinc Oxide

〇Sohei Matsuda¹, Koki Nagayama¹, Yi Sun¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹, Seiya Kasai² (1.Osaka Inst. of Tech. NMRC, 2.Hokkaido Univ. RCIQE)

1:30 PM - 3:30 PM

▲ [15p-P3-19] Cathodoluminescence Study of Oxygen Defects in SrTiO₃

〇JUN CHEN¹, SHUN ITO², TAKASHI SEKIGUCHI¹, TOYOHIRO CHIKYO¹ (1.NIMS, 2.Tohoku Univ.)

1:30 PM - 3:30 PM

[15p-P3-20] Lattice expansion by post annealing of SrTiO₃ films made by pulsed laser deposition using fourth harmonic Nd:YAG pulsed laser

〇Takumi Onodera¹, Takumi Fujiwara¹, Motonori Nakamura¹, Ken'ichi Yoshimoto¹, Koji Takamura¹ (1.NIT, Asahikawa College)

1:30 PM - 3:30 PM

[15p-P3-21] Reversible Rh valence change in optimized Rh:SrTiO₃ thin films

〇(M1)Yoshihisa Hosokawa¹, Ryota Takahashi^1,2, Mikk Lippmaa¹ (1.Univ. of Tokyo, ISSP, 2.JST PRESTO)

1:30 PM - 3:30 PM

[15p-P3-22] Fabrication of TiO₂Films with Molecular Precursor Solution by ESD Method

〇Ryuhei Ozawa¹, Ryo Sano¹, Yukihiro Kudoh¹, Hiroki Nagai¹, Mitsunobu Sato¹, Taiju Takahashi¹ (1.Kogakuin Univ.)

1:30 PM - 3:30 PM

[15p-P3-23] Application of Nb-doped TiO₂ electrospun core-sheath nanofibers
to dye sensitized solar cells

〇(M1C)Souta Kajiya¹, Shirong Guo¹, Takuya Matsuda¹, Teruaki Nomiyama¹, Yuji Horie¹ (1.Kagoshima Univ.)

1:30 PM - 3:30 PM

[15p-P3-24] Synthesis of MFe₂O₄(M=Ca,Mg) and evalution of photocatalytic activity by pn junction

〇(B)Kentaro Matsuzaki¹, Takuya Suzuki¹ (1.Kitakyushu Univ.)

1:30 PM - 3:30 PM

[15p-P3-25] Graded junction film using Nb:SrTiO₃ and LaMnO₃

〇Takayuki Shirota¹, Noboru Miura¹ (1.Meiji Univ.)

1:30 PM - 3:30 PM

▲ [15p-P3-26] Inorganic Hole Transport Material for Inverted Planar Lead Halide
Perovskite Solar Cells

〇(D)MD BODIUL Islam

Oral presentation

[16a-419-1~12] 6.3 Oxide electronics

Thu. Mar 16, 2017 9:00 AM - 12:15 PM 419 (419)

Yusuke Nishi(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[16a-419-1] Conductance Quantization in RRAM Devices using Y₂O₃-doped ZrO₂ thin films

〇Koshi Futatsumori¹, Ryo Shirata¹, Tadashi Shiota¹, Akio Nishiyama¹, Kazuo Shinozaki¹ (1.tokyo tech)

9:15 AM - 9:30 AM

[16a-419-2] Evaluation of Horizontal Leakage Current Conduction between Electrodes of Oxide Device of ReRAM

〇Sou Maejima¹, Sugie Toshiyki¹, Hayashi Yuya¹, Yamashita Kaoru¹, Noda Minoru¹ (1.Kyoto Inst. Tech.)

9:30 AM - 9:45 AM

[16a-419-3] Formation Mechanism of Conducting Path in Resistive Random Access Memory ~ Verification of a grain surface tiling model ~

〇(B)Sohta Hida¹, Takumi Moriyama¹, Takahiro Yamasaki², Takao Ohno², Michiko Yoshitake², Satoru Kishida^1,3, Kentaro Kinoshita^1,3 (1.Tottori Univ., 2.NIMS, 3.TiFREC)

9:45 AM - 10:00 AM

[16a-419-4] The Activation Energy for the Switch-ON Process of a Cu/Ta₂O₅/Pt Device

〇(B)Yuki Shigeoka¹, Tsuyoshi Hasegawa¹, Tohru Tsuruoka² (1.Waseda Univ, 2.NIMS)

10:00 AM - 10:15 AM

[16a-419-5] Study on a Cu-Ta₂O₅ Based Gap-type Atomic Switch

〇(B)Ai Kassai¹, Tohru Tsuruoka², Tsuyoshi Hasegawa¹ (1.Waseda Univ., 2.NIMS)

10:15 AM - 10:30 AM

[16a-419-6] Effects of Absorbed Water on the Switch-ON Time of an Ag/Ta₂O₅/Pt Device

〇(B)Naoya Tanahashi¹, Tsuyoshi Hasegawa¹, Tohru Tsuruoka² (1.Waseda Univ., 2.NIMS)

10:45 AM - 11:00 AM

[16a-419-7] Observation of Filamentary Conducting Channels in Resistive Switching Operation Using Atomically Flat Films of a-TaO_x

〇Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Takayoshi Katase², Hiromichi Ohta², Yasuo Takahashi¹ (1.Graduate School of IST, Hokkaido Univ., 2.RIES, Hokkaido Univ.)

11:00 AM - 11:15 AM

[16a-419-8] Study on an Ag-Ta₂O₅ Based Gap-type Atomic Switch

〇(B)Ayana Suzuki¹, Tohru Tsuruoka², Tsuyoshi Hasegawa¹ (1.Waseda Univ., 2.NIMS)

11:15 AM - 11:30 AM

[16a-419-9] Resistive switching in solution-processed silicon-nanocrystal film

〇Takeshi Kawauchi¹, Shinya Kano¹, Minoru Fujii¹ (1.Kobe Univ.)

11:30 AM - 11:45 AM

[16a-419-10] Control of Resistive Switching Properties of SiO_x Embedded with Ti Nanodots by Constant Voltage and Constant Current Application

〇Yusuke Kato¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

11:45 AM - 12:00 PM

[16a-419-11] Improvement of ReRAM memory fatigue properties of MOD-Derived BaTiO3 thin film

〇Yuya Hayashi¹, So Maejima¹, Toshiyuki Sugie¹, Kaoru Yamashita¹, Minoru Noda¹ (1.Kyoto Inst. Tech.)

12:00 PM - 12:15 PM

[16a-419-12] Non-volatile multistate resistance control in SmNiO₃ film EDLT

〇(B)Daiki Kawamoto¹, Azusa Hattori^1,2, Mahito Yamamoto¹, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ., 2.JST-PREST)

Oral presentation

[17a-419-1~12] 6.3 Oxide electronics

Fri. Mar 17, 2017 9:00 AM - 12:15 PM 419 (419)

Ota Kensuke(Toshiba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[17a-419-1] Stability of Stored Charge in HfO₂/SiO₂/Si Structure

Kazuma Noguchi¹, Ryohei Kuhara¹, Haruki Matsuo¹, Masahiro Hatamoto¹, 〇Yasuo Nara¹ (1.Univ. of Hyogo)

9:15 AM - 9:30 AM

▲ [17a-419-2] Alloy Disorder Modulated Electron Transport at Mg_xZn_1-xO/ZnO Heterointerface

〇(D)Aswin VishnuRadhan¹, Yusuke Kozuka¹, Masaki Uchida¹, Joseph Falson², Astushi Tsukazaki³, Masashi Kawasaki¹ (1.Univ. Tokyo, 2.Max Plank Institute, 3.Tohoku Univ.)

9:30 AM - 9:45 AM

[17a-419-3] Highly Sensitive Detection of Lung Cancer Marker using Surface State Modulation Effect onto Organic-Oxide Nanowire Hybrid Nanowire FET Sensor

Yong He¹, Kazuki Nagashima¹, Tsunaki Takahashi¹, Guozhu Zhang¹, Masaki Kanai¹, Jun Terao², Ken Uchida³, 〇Takeshi Yanagida¹ (1.Kyushu Univ., 2.Tokyo Univ., 3.Keio Univ.)

9:45 AM - 10:00 AM

[17a-419-4] Electric double layer transistors with ferroelectric PbTiO₃ channels

〇Ryutaro Nishino¹, Masaki Uchida¹, Yusuke Kozuka¹, Yoshihiro Iwasa^1,2, Masashi Kawasaki^1,2 (1.the Univ. of Tokyo, 2.RIKEN CEMS)

10:00 AM - 10:15 AM

[17a-419-5] Electric field-induced transport modulation in VO₂ nano-wire channels using a solid state gate material

〇(B)Yoshihide Tsuji¹, TingTing Wei¹, Kanki Teruo¹, Hidekazu Tanaka¹ (1.Osaka univ.)

10:15 AM - 10:30 AM

[17a-419-6] Thermally stable Sr₂RuO₄ electrode for oxide heterostructures

〇Ryota Takahashi^1,2, Mikk Lippmaa¹ (1.ISSP, Univ. Tokyo, 2.JST PRESTO)

10:45 AM - 11:00 AM

[17a-419-7] [Thin Film and Surface Physics Division Award Speech] Spin-glass behaviors in carrier polarity controlled Fe_3-xTi_xO₄ semiconductor thin films

〇Hiroyasu Yamahara¹, Munetoshi Seki¹, Masaki Adachi¹, Masanao Takahashi¹, Hidekazu Nasu¹, Koji Horiba², Hiroshi Kumigashira², Hitoshi Tabata¹ (1.Univ. of Tokyo, 2.KEK-PF)

11:00 AM - 11:15 AM

[17a-419-8] Memory Effect on Co, Si-substituted Lu₃Fe₅O₁₂ Cluster Spin Glass Thin Films

〇Hiroyasu Yamahara¹, Keita Mitsuhashi¹, Munetoshi Seki¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

11:15 AM - 11:30 AM

[17a-419-9] Epitaxial crystallization at Pt/Y₃Fe₅O₁₂ interface toward high efficient spin pomping

〇(B)Keita Mitsuhashi¹, Hiroyasu Yamahara¹, Hiroyuki Tanaka², Hitoshi Tabata¹ (1.Univ. of Tokyo, 2.ISIR, Osaka Univ.)

11:30 AM - 11:45 AM

[17a-419-10] Fabrication of the epitaxial Sn_xFe_3-xO₄ films on MgO(100)

Masato Araki¹, Hiroki Kajita¹, Takashi Yanase¹, Toshihiro Shimada¹, 〇Taro Nagahama¹ (1.Hokkaido Univ.)

11:45 AM - 12:00 PM

[17a-419-11] Preparation and Magnetic Property of CaFeO₃/LaFeO₃ Hetero-Structure
Grown on SrTiO₃(001) and LaAlO₃(001) Substrates

〇Takanori Akazawa¹, Shohei Ohashi¹, Hirotaka Matsuyama¹, Tomoyuki Koyama¹, Chun Wang¹, Qi Zhang¹, Huaping Song¹, Tomoko Nagata¹, Hiroshi Yamamoto¹, Nobuyuki Iwata¹ (1.CST, Nihon Univ.)

12:00 PM - 12:15 PM

[17a-419-12] Magnetic Properties and Hall effect of Co/Pt/r-plane oriented Cr₂O₃ Multilayer

〇Tsuyoshi Hirato¹, Takashi Sumida¹, Kosuke Hashimoto¹, Shinjiro Fukui¹, Yasuhiro Yanagihara¹, Tomoko Nagata¹, Hiroshi Yamamoto¹, Nobuyuki Iwata¹ (1.Nihon Univ)

Oral presentation

[17p-419-1~10] 6.3 Oxide electronics

Fri. Mar 17, 2017 1:30 PM - 4:00 PM 419 (419)

Kinoshita Kentaro(Tottori Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 1:45 PM

[17p-419-1] Synthesis of Zn₃N₂ films by DC and RF magnetron sputtering

〇Hironori Kamijo¹, Junjun Jia¹, Shinichi Nakamura¹, Yuzo Shigesato¹ (1.Aoyama Gakuin Univ.)

1:45 PM - 2:00 PM

▲ [17p-419-2] A 3D Structural Study of Hydrogenated and Non-hydrogenated Amorphous In-Ga-Zn-O Thin Films

〇(PC)Rosantha Kumara¹, Osami Sakata¹, Kyohei Ishikawa^2,3, Shinji Kohara¹, Hidenori Hiramatsu^2,3, Hideo Hosono^2,3, Toshio Kamiya^2,3 (1.NIMS/SPring-8, 2.MSL Tokyo Tech, 3.MCES Tokyo Tech)

2:00 PM - 2:15 PM

[17p-419-3] Fabrication of NiO thin films by annealing Ni(OH)2 precursor deposited by galvanostatic electrochemical deposition

〇(B)Miki Koyama¹, Masaya Ichimura¹ (1.Nagoya Inst.)

2:15 PM - 2:30 PM

[17p-419-4] N type AlOx thin films fabricated by drop photochemical deposition

〇(B)Masanari Umemura¹, Masaya Ichimura¹ (1.Nagoya Inst. of Tech.)

2:30 PM - 2:45 PM

[17p-419-5] EXAFS Analysis of Solid Solution of Perovskite Oxides

Shota Akama¹, 〇Wataru Kobayashi^1,2,3, Hideharu Niwa^1,2,3, Yutaka Moritomo^1,2,3 (1.Grad. Sch. Pure and Appl. Sci., Univ. Tsukuba, 2.Fac. Pure and Appl. Sci., Univ. Tsukuba, 3.CiRfSE, Univ. Tsukuba)

2:45 PM - 3:00 PM

[17p-419-6] Structural Analysis of LiMPO₄ (M=Fe, Co) under high pressure

〇Wataru Kobayashi^1,2,3, Kaoru Amaha¹, Yutaka Moritomo^1,2,3 (1.Grad. Sch. Pure and Appl. Sci., Univ. Tsukuba, 2.Fac. Pure and Appl. Sci., Univ. Tsukuba, 3.CiRfSE, Univ. Tsukuba)

3:00 PM - 3:15 PM

[17p-419-7] Temperature dependence of redox potential of P2-type Na_xCoO₂

〇Yuya Fukuzumi¹, Wataru Kobayashi^1,2,3, Yutaka Moritomo^1,2,3 (1.Grad. Sch. Pure and Appl. Sci., Univ. Tsukuba, 2.Fac. Pure and Appl. Sci., Univ. Tsukuba, 3.CiRfSE, Univ. Tsukuba)

3:15 PM - 3:30 PM

[17p-419-8] Local electronic states of Co–Fe Prussian blue analogues for Na-ion battery cathodes

〇Hideharu Niwa^1,2,3, Masamitsu Takachi¹, Jun Okamoto⁴, Wen-Bin Wu⁴, Di-Jing Huang⁴, Yutaka Moritomo^1,2,3 (1.Grad. Sch. Pure and Appl. Sci., Univ. Tsukuba, 2.Fac. Pure and Appl. Sci., Univ. Tsukuba, 3.CiRfSE, Univ. Tsukuba, 4.NSRRC)

3:30 PM - 3:45 PM

[17p-419-9] Analysis of capacity deterioration of positive electrode material of lithium ion battery by first-principles calculation

〇satoshi yoshio¹, koichiro maki¹ (1.Sumitomo Metal Mining)

3:45 PM - 4:00 PM

[17p-419-10] First Principles Analysis of Li Diffusion in LiZr₂(PO₄)₃ Solid State Electrolytes

〇Minoru Ikeda¹, Takahisa Ohno¹, Kazutaka Mitsuishi¹, Yoshiyuki Inaguma², Koki Funayama², Daisuke Mori² (1.NIMS, 2.Gakusyuin Univ.)

Sessions

6 Thin Films and Surfaces » 6.3 Oxide electronics

[14a-419-1~10] 6.3 Oxide electronics

△ [14a-419-1] Analysis of valence electron state in resistance change region of rutile TiO2 single crystals memristor

△ [14a-419-2] Repetition characteristics of resistive switching by the control of oxygen vacancy distribution in rutile type TiO2 single crystals

△ [14a-419-3] Evaluation of TiOx ReRAM fabricated by reactive sputtering

△ [14a-419-4] In-situ observation of Cu movement in MoOx/Al2O3 double layer CBRAM during cyclic switching process

△ [14a-419-5] Evaluation of multilevel memory characteristics of Ta2O5 ReRAM using different top electrode

△ [14a-419-7] The enhancement of electronic phase switching efficiency in VO2 freestanding nanowires

△ [14a-419-8] True Vapor–Liquid–Solid Process Prevents Unintentional Dopingof Single Crystalline Metal Oxide Nanowires

△ [14a-419-9] Strain effect on Li+ ionic conduction in Li3xLa2/3-xTiO3: molecular dynamics simulation

▼ [14a-419-10] Electrochemical Deposition of Lithium Phosphate Films for Battery Applications

[14p-419-1~16] 6.3 Oxide electronics

△ [14p-419-2] Electric field modulation of delta-doped SrTiO3 interfaces

△ [14p-419-3] NC-AFM study of a SrTiO3(100)-(√13×√13)-R33.7o reconstructed surface

△ [14p-419-5] Magnetic imaging of p-type SrTiO3 by laser-excited photoemission electron microscopy

△ [14p-419-6] Magnetic Domain and Electronic structure of LaAlO3/CaTiO3 Interface Observed by Laser-excited Photoelectron Emission Microscopy

△ [14p-419-7] Reversible control of resistance of NdNiO3 thin film through topotactic fluorination/oxygen annealing

△ [14p-419-8] Giant Inductance in Nonlinear Conductor

△ [14p-419-9] Impact of epitaxial strain for electrical properties of perovskite vanadates

△ [14p-419-10] Epitaxial growth and physical properties of β-pyrochlore-type CsW2O6 films

△ [14p-419-11] Cation off-stoichiometry in PLD-grown (Ba,La)SnO3 thin films and its influence on their transport properties

△ [14p-419-13] Fabrication of flat surface ZION films on lattice mismatched substrate by RF magnetron sputtering

△ [14p-419-15] Study of thermal oxide films for the application to metal separator of fuel cell

△ [14p-419-16] Pulsed laser deposition of LaAlO3 thin films on SrTiO3(100) substrate using the 5th harmonic of Nd:YAG laser (wavelength of 213 nm)

[15a-419-1~10] 6.3 Oxide electronics

▲ [15a-419-2] Synthesis and Characterization of ZnO and Al Doped ZnO Nanostructures by Using Advanced Spray Pyrolysis Deposition Technique

▲ [15a-419-7] n-Cu2O/p-CuxS Thin Film Heterostructures for Solar cells

[15p-P3-1~26] 6.3 Oxide electronics

▲ [15p-P3-19] Cathodoluminescence Study of Oxygen Defects in SrTiO3

▲ [15p-P3-26] Inorganic Hole Transport Material for Inverted Planar Lead HalidePerovskite Solar Cells

[16a-419-1~12] 6.3 Oxide electronics

[17a-419-1~12] 6.3 Oxide electronics

▲ [17a-419-2] Alloy Disorder Modulated Electron Transport at MgxZn1-xO/ZnO Heterointerface

[17p-419-1~10] 6.3 Oxide electronics

▲ [17p-419-2] A 3D Structural Study of Hydrogenated and Non-hydrogenated Amorphous In-Ga-Zn-O Thin Films

Authentication

△ [14a-419-2] Repetition characteristics of resistive switching by the control of oxygen vacancy distribution in rutile type TiO₂ single crystals

△ [14a-419-3] Evaluation of TiO_x ReRAM fabricated by reactive sputtering

△ [14a-419-4] In-situ observation of Cu movement in MoO_x/Al₂O₃ double layer CBRAM during cyclic switching process

△ [14a-419-5] Evaluation of multilevel memory characteristics of Ta₂O₅ ReRAM using different top electrode

△ [14a-419-7] The enhancement of electronic phase switching efficiency in VO₂ freestanding nanowires

△ [14a-419-8] True Vapor–Liquid–Solid Process Prevents Unintentional Doping
of Single Crystalline Metal Oxide Nanowires

△ [14a-419-9] Strain effect on Li⁺ ionic conduction in Li_3xLa_2/3-xTiO₃: molecular dynamics simulation

△ [14p-419-2] Electric field modulation of delta-doped SrTiO₃ interfaces

△ [14p-419-3] NC-AFM study of a SrTiO₃(100)-(√13×√13)-R33.7^o reconstructed surface

△ [14p-419-5] Magnetic imaging of p-type SrTiO₃ by laser-excited photoemission electron microscopy

△ [14p-419-6] Magnetic Domain and Electronic structure of LaAlO₃/CaTiO₃Interface Observed by Laser-excited Photoelectron Emission Microscopy

△ [14p-419-7] Reversible control of resistance of NdNiO₃ thin film through topotactic fluorination/oxygen annealing

△ [14p-419-10] Epitaxial growth and physical properties of β-pyrochlore-type CsW₂O₆ films

△ [14p-419-11] Cation off-stoichiometry in PLD-grown (Ba,La)SnO₃ thin films and its influence on their transport properties

△ [14p-419-16] Pulsed laser deposition of LaAlO₃ thin films on SrTiO₃(100) substrate using the 5th harmonic of Nd:YAG laser (wavelength of 213 nm)

▲ [15a-419-7] n-Cu₂O/p-Cu_xS Thin Film Heterostructures for Solar cells

▲ [15p-P3-19] Cathodoluminescence Study of Oxygen Defects in SrTiO₃

▲ [15p-P3-26] Inorganic Hole Transport Material for Inverted Planar Lead Halide
Perovskite Solar Cells

▲ [17a-419-2] Alloy Disorder Modulated Electron Transport at Mg_xZn_1-xO/ZnO Heterointerface