[16a-419-1~12] 6.3 Oxide electronics

[16a-419-2] Evaluation of Horizontal Leakage Current Conduction between Electrodes of Oxide Device of ReRAM

〇Sou Maejima¹, Sugie Toshiyki¹, Hayashi Yuya¹, Yamashita Kaoru¹, Noda Minoru¹ (1.Kyoto Inst. Tech.)

Keywords:resistive random access memory, barium titanate, Metal Organic Decomposition