[14a-419-1~10] 6.3 Oxide electronics

△ [14a-419-5] Evaluation of multilevel memory characteristics of Ta₂O₅ ReRAM using different top electrode

Reon Katsumura¹, 〇Yuanlin Li¹, Mika Gronroos¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹, Hideyuki Andoh², Takashi Morie² (1.Hokkaido Univ., 2.Kyushu Inst. Tech.)

Keywords:resistive random access memory, multilevel memory, analog memory