[15p-P3-1~26] 6.3 Oxide electronics

[15p-P3-13] Multi step oscillations in VO₂/TiN/Ti/Si layered structure device

〇Tomohiro Aoto¹, Kenta Sato¹, Md. Suruz Mian¹, Kunio Okimura¹ (1.Tokai Univ.)

Keywords:Vanadium dioxide

Vanadium dioxide (VO₂) shows a sharp insulator-metal transition (IMT) at relatively low temperature at around 68°C. Recently, we reported polycrystalline growth of VO₂ thin films on polycrystalline conductive TiN/Ti layers. In this study, we newly introduced oriented conductive TiN/Ti layers with TiN (111) orientation. We succeeded in growing the oriented VO₂ thin films on them. Utiliting this VO₂/TiN/Ti device, we observed self-oscillation characteristics different from previously reported VO₂. We are going to show the growth of VO₂ and self-oscillation phenomena of these devices.