[15a-422-1~12] 3.13 Semiconductor optical devices

[15a-422-10] Electric Resistance Reduction of VCSELs by Thickness-Modulated DBR

Masashi Suhara¹, 〇Tomoyuki Miyamoto¹ (1.Tokyo Tech)

Keywords:semiconductor laser, DBR, optical wireless power transmission

Reduction of electric resistance is important in order to increase the efficiency of the VCSEL for optical wireless power transmission. In this study, GaAs-based VCSEL using thickness-modulated DBR (TM-DBR) is investigated.In the TM-DBR, thick low resistivity GaAs layer and thin high resistivity AlGaAs layer are used. Using a relation of the Al composition and the electric resistivity dependence of the resistivity, electric resistance of TM-DBR-VCSEL was analyzed. Since TM-DBR requires increased number of DBR pairs, optimum thickness modulation ratio is required.