11:30 AM - 11:45 AM
△ [15a-503-10] Epitaxial lateral overgrowth of GaN on trench patterned (10-10) bulk GaN substrates
Keywords:Gallium nitride, Freestanding substrate, MOVPE
Presentation information
Oral presentation
15 Crystal Engineering » 15.4 III-V-group nitride crystals
[15a-503-1~12] 15.4 III-V-group nitride crystals
Wed. Mar 15, 2017 9:00 AM - 12:15 PM 503 (503)
Tetsuya Akasaka(NTT), Yoshiki Saito(TOYODA GOSEI)