10:30 AM - 10:45 AM
[15a-B6-5] Operando photoelectron spectromicroscopy to elucidate operation mechanism of a dual-gate epi-graphene field-effect transistor to decrease drain conductance (I)
Keywords:graphene, field-effect transistor, x-ray photoelectron spectromicroscopy
To solve the issue of non-saturation of drain current (large drain conductance), we proposed a dual-gate graphene-based field-effect transistor (DG-GFET). This DG-GFET enables to realize a pinch-off with a high carrier mobility and saturation velocity. The occurence of the pinch-off was confirmed by our electrical characterization. In this talk, we will present operando x-ray photoelectron spectromicroscopy (resolution <100 nm) results to clarify the detailed mechanism of the DG-GFET operation.