[15a-B6-1~11] 17.2 Graphene

[15a-B6-5] Operando photoelectron spectromicroscopy to elucidate operation mechanism of a dual-gate epi-graphene field-effect transistor to decrease drain conductance (I)

Kazuma Saito¹, Masaya Okada², Fuminori Mitsuhashi², Yasunori Tateno², Tsuyoshi Kouchi², Naoka Nagamura³, Shun Konno⁴, Yoshinobu Takahashi⁴, Masato Kotsugi⁴, Koji Horiba⁵, Maki Suemitsu¹, Masaharu Oshima⁶, 〇Hirokazu Fukidome¹ (1.RIEC, Tohoku Univ., 2.Sumitomo Electric Industries, 3.NIMS, 4.Tokyo Univ. Science, 5.KEK/PF, 6.Univ. Tokyo)

Keywords:graphene, field-effect transistor, x-ray photoelectron spectromicroscopy

To solve the issue of non-saturation of drain current (large drain conductance), we proposed a dual-gate graphene-based field-effect transistor (DG-GFET). This DG-GFET enables to realize a pinch-off with a high carrier mobility and saturation velocity. The occurence of the pinch-off was confirmed by our electrical characterization. In this talk, we will present operando x-ray photoelectron spectromicroscopy (resolution <100 nm) results to clarify the detailed mechanism of the DG-GFET operation.