[15a-F201-1~12] 15.7 Crystal evaluation, impurities and crystal defects

△ [15a-F201-1] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (1)
-TCAD Analysis of Light Element Trapping and Diffusion Behavior in Projection Range-

〇Ryosuke Okuyama¹, Satoshi Shigematsu¹, Ryo Hirose¹, Ayumi Masada¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

Keywords:TCAD

We demonstrated that oxygen and hydrogen is trapped in the projection range of the carbon cluster ion implantation after epitaxial growth. Analysis of trapping and diffusion behavior for oxygen and hydrogen in the projection range is important to the characteristic understanding of the carbon cluster ion implanted wafer. Therefore, we tried to analyze trapping and diffusion behavior by TCAD simulation which assumed the reaction model that a CI cluster of carbon (C) and interstitial Si (I) bind to oxygen and hydrogen. As the result of TCAD and SIMS analysis, we hypothesize that the oxygen and hydrogen in the projected range of a C cluster form a binding state with the C/I cluster.