Oral presentation

15 Crystal Engineering » 15.7 Crystal evaluation, impurities and crystal defects

[15a-F201-1~12] 15.7 Crystal evaluation, impurities and crystal defects

Wed. Mar 15, 2017 9:00 AM - 12:15 PM F201 (F201)

Akira Kiyoi(Mitsubishi Electric), Shotaro Takeuchi(Ohsaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [15a-F201-1] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (1)
-TCAD Analysis of Light Element Trapping and Diffusion Behavior in Projection Range-

〇Ryosuke Okuyama¹, Satoshi Shigematsu¹, Ryo Hirose¹, Ayumi Masada¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

9:15 AM - 9:30 AM

[15a-F201-2] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)
- Hydrogen Passivation Effect of Room Temperature Bonding Wafer -

〇Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

9:30 AM - 9:45 AM

△ [15a-F201-3] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (3)
- Analysis of annealing behavior of implantation induced defects in the projection range using Atom Probe Tomography -

〇Satoshi Shigematsu¹, Ryosuke Okuyama¹, Ryo Hirose¹, Ayumi Masada¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

9:45 AM - 10:00 AM

[15a-F201-4] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (4)
-The influence of oxygen concentration in implanted region on gettering of metallic impurities (2)-

〇Ayumi Masada¹, Toshiro Nakai¹, Ryo Hirose¹, Satoshi Shigematsu¹, Takeshi Kadono¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

10:00 AM - 10:15 AM

△ [15a-F201-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)
-Carbon cluster ion implantation-related defect formation analyzed by X-ray photoelectron spectroscopy-

〇TAKESHI KADONO¹, Ryosuke Okuyama¹, Ayumi Masada¹, Ryo Hirose¹, Satoshi Shigematsu¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

10:15 AM - 10:30 AM

△ [15a-F201-6] Fabrication and Property of Surface-Oxygen-Concentration Controlled Ultrathin Silicon Wafers

〇Kazumi Hogano¹, Shotaro Takeuchi¹, Haruo Sudo², Tatsuhiko Aoki², Koji Araki², Koji Izunome², Akira Sakai¹ (1.Osaka Univ., 2.GlobalWafers Japan.)

10:45 AM - 11:00 AM

[15a-F201-7] Behavior of point-defect-incorporation in ultra-high temperature RTP under oxygen atmosphere (I)

〇Susumu Maeda¹, Hideyuki Okamura¹, Kozo Nakamura³, Haruo Sudo¹, koji Sueoka² (1.GlobalWafers Japan Co.,Ltd., 2.Faculty of Computer Science and System Engineering, Okayama Prefectural Univ., 3.Regional Cooperative Research Organization, Okayama Prefectural Univ.)

11:00 AM - 11:15 AM

[15a-F201-8] Behavior of point-defect-incorporation in ultra-high temperature RTP under oxygen atmosphere (II)

〇Kozo Nakamura¹, Hideyuki Okamura³, Susumu maeda³, Haruo Sudo³, Koji Sueoka² (1.Okayama Pref. Univ. Local Joint, 2.Okayama Pref. Univ. Commu., 3.GlobalWafers Japan)

11:15 AM - 11:30 AM

[15a-F201-9] Investigation of annihilation behavior of void defects in Cz-Si wafers by ultra-high temperature RTP

〇Haruo Sudo¹, Kozo Nakamura³, Susumu Maeda¹, Hideyuki Okamura¹, Koji Sueoka² (1.GlobalWafers Japan, 2.Faculty of Computer Science and System Engineering, Okayama Prefectural Univ., 3.Regional Cooperative Research Organization, Okayama Prefectural Univ.)

11:30 AM - 11:45 AM

[15a-F201-10] Effects of nitrogen doping on the oxygen precipitation in the ultra-high temperature RTP wafers

〇Hideyuki Okamura¹, Haruo Sudo¹, Kozo Nakamura³, Susumu Maeda¹, Koji Sueoka² (1.GlobalWafers Japan, 2.Faculty of Computer Science and System Engineering, Okayama Prefectural Univ., 3.Regional Cooperative Research Organization, Okayama Prefectural Univ.)

11:45 AM - 12:00 PM

[15a-F201-11] Evaluation of SiC Schottky barrier diode by multifunctional scanning probe microscope

〇Hidekazu Yamamoto¹, Takeshi Uruma¹, Nobuo Satoh¹ (1.Chiba Inst. of Tech.)

12:00 PM - 12:15 PM

△ [15a-F201-12] Evaluation of GaN wafer for power devices by Kelvin probe Force Microscopy(1)

〇Yuuki Uchida¹, Mitsuhiro Yasuno¹, Tatuki Suzuki¹, Mizuki Uchimori¹, Hidekazu Yamamoto¹ (1.CIT)

Session information

[15a-F201-1~12] 15.7 Crystal evaluation, impurities and crystal defects

△ [15a-F201-1] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (1)
-TCAD Analysis of Light Element Trapping and Diffusion Behavior in Projection Range-

[15a-F201-2] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)
- Hydrogen Passivation Effect of Room Temperature Bonding Wafer -

△ [15a-F201-3] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (3)
- Analysis of annealing behavior of implantation induced defects in the projection range using Atom Probe Tomography -

[15a-F201-4] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (4)
-The influence of oxygen concentration in implanted region on gettering of metallic impurities (2)-

△ [15a-F201-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)
-Carbon cluster ion implantation-related defect formation analyzed by X-ray photoelectron spectroscopy-

△ [15a-F201-6] Fabrication and Property of Surface-Oxygen-Concentration Controlled Ultrathin Silicon Wafers

[15a-F201-7] Behavior of point-defect-incorporation in ultra-high temperature RTP under oxygen atmosphere (I)

[15a-F201-8] Behavior of point-defect-incorporation in ultra-high temperature RTP under oxygen atmosphere (II)

[15a-F201-9] Investigation of annihilation behavior of void defects in Cz-Si wafers by ultra-high temperature RTP

[15a-F201-10] Effects of nitrogen doping on the oxygen precipitation in the ultra-high temperature RTP wafers

[15a-F201-11] Evaluation of SiC Schottky barrier diode by multifunctional scanning probe microscope

△ [15a-F201-12] Evaluation of GaN wafer for power devices by Kelvin probe Force Microscopy(1)

Authentication

Session information

[15a-F201-1~12] 15.7 Crystal evaluation, impurities and crystal defects

△ [15a-F201-1] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (1)-TCAD Analysis of Light Element Trapping and Diffusion Behavior in Projection Range-

[15a-F201-2] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)- Hydrogen Passivation Effect of Room Temperature Bonding Wafer -

△ [15a-F201-3] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (3)- Analysis of annealing behavior of implantation induced defects in the projection range using Atom Probe Tomography -

[15a-F201-4] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (4)-The influence of oxygen concentration in implanted region on gettering of metallic impurities (2)-

△ [15a-F201-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)-Carbon cluster ion implantation-related defect formation analyzed by X-ray photoelectron spectroscopy-

△ [15a-F201-6] Fabrication and Property of Surface-Oxygen-Concentration Controlled Ultrathin Silicon Wafers

[15a-F201-7] Behavior of point-defect-incorporation in ultra-high temperature RTP under oxygen atmosphere (I)

[15a-F201-8] Behavior of point-defect-incorporation in ultra-high temperature RTP under oxygen atmosphere (II)

[15a-F201-9] Investigation of annihilation behavior of void defects in Cz-Si wafers by ultra-high temperature RTP

[15a-F201-10] Effects of nitrogen doping on the oxygen precipitation in the ultra-high temperature RTP wafers

[15a-F201-11] Evaluation of SiC Schottky barrier diode by multifunctional scanning probe microscope

△ [15a-F201-12] Evaluation of GaN wafer for power devices by Kelvin probe Force Microscopy(1)

Authentication

△ [15a-F201-1] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (1)
-TCAD Analysis of Light Element Trapping and Diffusion Behavior in Projection Range-

[15a-F201-2] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)
- Hydrogen Passivation Effect of Room Temperature Bonding Wafer -

△ [15a-F201-3] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (3)
- Analysis of annealing behavior of implantation induced defects in the projection range using Atom Probe Tomography -

[15a-F201-4] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (4)
-The influence of oxygen concentration in implanted region on gettering of metallic impurities (2)-

△ [15a-F201-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)
-Carbon cluster ion implantation-related defect formation analyzed by X-ray photoelectron spectroscopy-