[15a-F201-1~12] 15.7 Crystal evaluation, impurities and crystal defects

[15a-F201-2] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)
- Hydrogen Passivation Effect of Room Temperature Bonding Wafer -

〇Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

Keywords:epitaxial silicon wafer, room templature bonding, passivation

We have been studying new epitaxial silicon wafers that epitaxial silicon layer bonded on carbon-cluster ion implanted silicon substrate at room temperature for decreasing image lag of CMOS imager devices performance.
In this studying, we demonstrate this wafer design can getter high concentration hydrogen amount under epitaxial layer such as oxygen impurity gettering behavior after room temperature bonding.