[15a-F201-1~12] 15.7 Crystal evaluation, impurities and crystal defects

△ [15a-F201-3] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (3)
- Analysis of annealing behavior of implantation induced defects in the projection range using Atom Probe Tomography -

〇Satoshi Shigematsu¹, Ryosuke Okuyama¹, Ryo Hirose¹, Ayumi Masada¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

Keywords:atom probe

Previous study, we demonstrated that there are implantation related defects size of approximately 5 nm in the carbon cluster ion implanted projection range. These defects expected to be a gettering sinks of light elements and heavy metallic impurities. However, it is not clear understand that the detail of defects morphology after heat treatment. In this study, we revealed that these defects formed carbon clusters analyzed by 3Dimensional laser-assisted atom probe tomography which can provide three dimensional impurity distribution with atomic-scale resolution.
Moreover, we investigated that the oxygen segregates to interface between carbon clusters and silicon bulk materials.