[15a-F201-1~12] 15.7 Crystal evaluation, impurities and crystal defects

[15a-F201-4] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (4)
-The influence of oxygen concentration in implanted region on gettering of metallic impurities (2)-

〇Ayumi Masada¹, Toshiro Nakai¹, Ryo Hirose¹, Satoshi Shigematsu¹, Takeshi Kadono¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

Keywords:silicon wafer, carbon cluster ion implantation, proximity gettering