[15a-F201-1~12] 15.7 Crystal evaluation, impurities and crystal defects

△ [15a-F201-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)
-Carbon cluster ion implantation-related defect formation analyzed by X-ray photoelectron spectroscopy-

〇TAKESHI KADONO¹, Ryosuke Okuyama¹, Ayumi Masada¹, Ryo Hirose¹, Satoshi Shigematsu¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

Keywords:Cluster ion, XPS, Amorphous

A high dose amount condition of carbon cluster ion implantation generated ion implantation-related defects such as stacking faults after epitaxial growth.Therefore, we considered to clarify the origin of these defects formation. In this work, we evaluated the crystalline of carbon cluster ion implantation projection range by using X-ray photoelectron spectroscopy. As a result, we revealed that amorphous formation dependence on carbon cluster ion implantation condition by cylindrical amorphous formation model.