Behavior of point-defect-incorporation in ultra-high temperature RTP under oxygen atmosphere (II)

Kozo Nakamura; Hideyuki Okamura; Susumu maeda; Haruo Sudo; Koji Sueoka

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal evaluation, impurities and crystal defects

[15a-F201-1~12] 15.7 Crystal evaluation, impurities and crystal defects

Wed. Mar 15, 2017 9:00 AM - 12:15 PM F201 (F201)

Akira Kiyoi(Mitsubishi Electric), Shotaro Takeuchi(Ohsaka Univ.)

11:00 AM - 11:15 AM

[15a-F201-8] Behavior of point-defect-incorporation in ultra-high temperature RTP under oxygen atmosphere (II)

〇Kozo Nakamura¹, Hideyuki Okamura³, Susumu maeda³, Haruo Sudo³, Koji Sueoka² (1.Okayama Pref. Univ. Local Joint, 2.Okayama Pref. Univ. Commu., 3.GlobalWafers Japan)

Keywords:Point defect, Thermal oxidation

We have reported about the super-saturation of self-interstitials in silicon crystals by the high temperature oxidation (1300-1350 C) at the previous presentation in this meeting. We discuss about the mechanism of the super-saturation of self-interstitials by high temperature oxidation using stress effect model.