The 64th JSAP Spring Meeting, 2017

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.7 Crystal evaluation, impurities and crystal defects

[15a-F201-1~12] 15.7 Crystal evaluation, impurities and crystal defects

Wed. Mar 15, 2017 9:00 AM - 12:15 PM F201 (F201)

Akira Kiyoi(Mitsubishi Electric), Shotaro Takeuchi(Ohsaka Univ.)

11:45 AM - 12:00 PM

[15a-F201-11] Evaluation of SiC Schottky barrier diode by multifunctional scanning probe microscope

〇Hidekazu Yamamoto1, Takeshi Uruma1, Nobuo Satoh1 (1.Chiba Inst. of Tech.)

Keywords:power device, SiC, multifunctional scanning probe microscope

SiC Schottky barrier diode was evaluated by multifunctional scanning probe microscope. Increase of surface potencial according to increase of reverse bias was evaluated by Kelvin-probe force microscopy.