The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15a-F204-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Mar 15, 2017 9:00 AM - 12:15 PM F204 (F204)

Yukari Ishikawa(JFCC)

9:00 AM - 9:15 AM

[15a-F204-1] Influence of grwoth temperature on the crystal quality in solution growth of SiC using Cr solvent

Kouki Suzuki1, Toshinori Taishi1,2 (1.Shinshu Univ. (Eng.), 2.Shinshu Univ. Center for Energy and Environmental Science)

Keywords:Solution growth of SiC, Bulk crystal growth