Oral presentation

[15a-F204-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Mar 15, 2017 9:00 AM - 12:15 PM F204 (F204)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [15a-F204-1] Influence of grwoth temperature on the crystal quality in solution growth of SiC using Cr solvent

〇Kouki Suzuki¹, Toshinori Taishi^1,2 (1.Shinshu Univ. (Eng.), 2.Shinshu Univ. Center for Energy and Environmental Science)

9:15 AM - 9:30 AM

[15a-F204-2] Crystalline quality of n-type 4H-SiC off-axis substrate by solution growth technique

〇Kazuhiko Kusunoki¹, Kazuaki Seki¹, Yutaka Kishida¹, Hiroshi Kaido¹, Koji Moriguchi¹, Hironori Daikoku², Motohisa Kado², Masayoshi Doi², Katsunori Danno², Akinori Seki², Takayuki Shirai², Hiroaki Saito², Takeshi Bessho² (1.NSSMC, 2.Toyota Motor)

9:30 AM - 9:45 AM

△ [15a-F204-3] In situ observation of stacking fault expansion in 4H-SiC by X-ray topography in back reflection geometry

〇Fumihiro Fujie¹, Shunta Harada¹, Kenta Murayama¹, Kenji Hanada¹, Penglei Chen¹, Tomohisa Kato², Miho Tagawa¹, Toru Ujihara^1,2 (1.Nagoya Univ., 2.AIST)

9:45 AM - 10:00 AM

[15a-F204-4] SiC solution growth under controlled with the shape of solution by X-ray transmission method

〇Takenobu Sakai¹, Motohisa Kado², Hironori Daikoku², Shunta Harada³, Toru Ujihara³ (1.Nagoya Univ. Inst. of Inno. for Fut. Soc., 2.TOYOTA Mot. Corpo., 3.Nagoya Univ. Inst. of Mate. and Syst. for Susta.)

10:00 AM - 10:15 AM

[15a-F204-5] Mechanism of Replicating Polytype of 4H-SiC by Solution Growth on Concave Surface

〇(D)Hironori Daikoku¹, Sakiko Kawanishi², Takeshi Yoshikawa¹ (1.The Univ. of Tokyo, 2.Tohoku Univ.)

10:15 AM - 10:30 AM

[15a-F204-6] Thermodynamics of Al and N in 4H-SiC for Doping Control during Solution Growth of SiC

〇Sakiko Kawanishi¹, Hiroyuki Shibata¹, Takeshi Yoshikawa² (1.Tohoku Univ., 2.Univ. Tokyo)

10:45 AM - 11:00 AM

[15a-F204-7] Anti-Corrosion of Pyrolytic Carbon Film for SiC Epitaxial Reactor Cleaning

Kohei Shioda¹, 〇Hitoshi Habuka¹, Hideki Ito², Shin-ichi Mitani², Yoshinao Takahashi³ (1.Yokohama Nat. Univ., 2.NuFlare Technology, 3.Kanto Denka Kogyo)

11:00 AM - 11:15 AM

[15a-F204-8] Rate-Determining Process in Micro-Trench-Filling Epitaxial Growth of 4H-SiC

〇Kazuhiro Mochizuki¹, Shiyang Ji¹, Ryoji Kosugi¹, Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST)

11:15 AM - 11:30 AM

▲ [15a-F204-9] Investigation on the optimal growth region for 4H-SiC CVD trench filling

〇Shiyang Ji¹, Ryoji Kosugi¹, Kazutoshi Kojima¹, Kazuhiro Mochizuki¹, Shingo Saito¹, Yoko Matsukawa¹, Yoshiyuki Yonezawa¹, Sadafumi Yoshida¹, Hajime Okumura¹ (1.AIST)

11:30 AM - 11:45 AM

[15a-F204-10] Carrier lifetime in 4H-SiC epitaxial layer on C-face with low impurity concentration

〇Mitsuhiro Kushibe¹, Johji Nishio¹, Takashi Shinohe¹, Akira Miyasaka², Hirokuni Asamizu³, Hidenori Kitai², Shinsuke Harada², Kazutoshi Kojima² (1.TOSHIBA Corp., 2.AIST, 3.ROHM Co.,Ltd.)

11:45 AM - 12:00 PM

△ [15a-F204-11] Microscopic FCA measurement for depth-resolved carrier lifetime measurements in SiC

〇(M1)Shinichi Mae¹, Takeshi Tawara^2,3, Hidekazu Tsuchida⁴, Masashi Kato¹ (1.NITech, 2.AIST, 3.Fuji Electcic Co., Ltd., 4.CRIEPI)

12:00 PM - 12:15 PM

[15a-F204-12] Temperature dependence of photoluminescence decay time from 1SSF and PD in 4H-SiC

〇Shinya Katahira¹, Yoshihito Ichikawa¹, Shunta Harada², Tunenobu Kimoto³, Masashi Kato¹ (1.NITech, 2.Nagoya Univ., 3.Kyoto Univ.)

Oral presentation

[15p-F204-1~19] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Mar 15, 2017 1:30 PM - 7:00 PM F204 (F204)

Takahiro Makino(QST), Masashi Kato(NITech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[15p-F204-1] [Kashiko Kodate Award Speech] Characterization of defects in wide bandgap semiconductors

〇Yukari Ishikawa¹ (1.Japan Fine Ceramics Center)

2:00 PM - 2:15 PM

[15p-F204-2] [JSAP Young Scientist Award Speech] Correlation between shapes of Shockley stacking faults and structure of basal plane dislocations in 4H-SiC epilayers

〇Akifumi Iijima¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

2:15 PM - 2:30 PM

[15p-F204-3] Partial Dislocation Motion under Electron Beam Irradiation by SEM

Ryu Nakata¹, 〇Yoshifumi Yamashita¹, Takeshi Nishikawa¹, Masaki Hada¹, Yasuhiko Hayashi¹ (1.Okayama Univ.)

2:30 PM - 2:45 PM

[15p-F204-4] Hall-Voltage Inversion in Heavily Al-doped 4H-SiC by Hall-Effect Measurement

〇(M2)Akinobu Takeshita¹, Tatsuya Imamura¹, Kouta Takano¹, Kazuya Okuda¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

2:45 PM - 3:00 PM

[15p-F204-5] Characterization of Conduction Mechanisms in Heavily Al-Doped 4H-SiC
and Possibility to Reduce Its Resistance

3:00 PM - 3:15 PM

[15p-F204-6] Electrical Characterization of Al-N Co-Doped 4H-SiC Grown by Different Methods

〇(M2)Akinobu Takeshita¹, Tatsuya Imamura¹, Kouta Takano¹, Kazuya Okuda¹, Hideharu Matsuura¹, Shiyang Ji², Takeshi Mitani², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

3:30 PM - 3:45 PM

[15p-F204-7] Observation of Doped Region in Laser Al Doping of 4H-SiC

〇Akihiro Ikeda¹, Rikuho Sumina¹, Ryota Tsutsui¹, Hiroshi Ikenoue¹, Tanemasa Asano¹ (1.Kyushu Univ.)

3:45 PM - 4:00 PM

[15p-F204-8] Formation of Ohmic Contact on the n-type 4H-SiC by Si Cap Annealing

〇(M2)Taichi Taniguchi¹ (1.Hiroshima Univ.)

4:00 PM - 4:15 PM

[15p-F204-9] Mapping of Ni/p-3C-SiC Shottky contacts on 6H-SiC substrate by using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Naoki Mishina¹, Naoto Ichikawa², Masashi Kato² (1.Univ. of Fukui, 2.Nagoya Inst. of Tech.)

4:15 PM - 4:30 PM

[15p-F204-10] Measurements of carrier distribution in SiC PiN diodes by using optical transmission

〇Masashi Kato¹, Shin-ichi Mae¹, Yoshiyuki Yonezawa², Tomohisa Kato² (1.NITech, 2.AIST)

4:30 PM - 4:45 PM

[15p-F204-11] Expansion and Contraction of Single Shockley Stacking Faults in 4H-SiC Epitaxial Layer under Ultraviolet Irradiation

〇Takanori Tanaka¹, Hiromu Shiomi¹, Naoyuki Kawabata², Yoshiyuki Yonezawa¹, Tomohisa Kato¹, Hajime Okumura¹ (1.AIST, 2.Mitsubishi Electric)

4:45 PM - 5:00 PM

[15p-F204-12] Analysis on Relationship between Pulse Generation and Carrier Sweeping-out in Reverse Reocvery of SiC-p⁺/p^-/n⁺ Diode

〇Takuma Shirai¹, Noriyuki Iwamuro¹, Kenji Fukuda² (1.Univ. Tsukuba, 2.AIST)

5:00 PM - 5:15 PM

[15p-F204-13] Analysis on Reverse Recovery Characteristics of SiC-pin Diode Using Body Diode of SiC-pMOSFET

〇(M1)Taiga Goto¹, Takuma Shirai¹, Noriyuki Iwamuro¹, Kenji Fukuda² (1.Tsukuba Univ., 2.AIST)

5:30 PM - 5:45 PM

[15p-F204-14] Robustness against Thermal Runaway of Reverse-Biased Silicon Carbide

〇Minoru Nakagawa¹, Seigo Mori¹, Yuichiro Nanen¹, Masatoshi Aketa¹, Hirokazu Asahara¹, Takashi Nakamura¹ (1.ROHM Co.,Ltd.,)

5:45 PM - 6:00 PM

[15p-F204-15] Observation of color centers in SiC pin diodes

〇Hiroki Tsunemi^1,2, Tomoya Honda^1,2, Takahiro makino², Sinobu Onoda², Shin-ichiro Sato², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ, 2.QST)

6:00 PM - 6:15 PM

[15p-F204-16] Polarization properties of single photon sources in channel region of 4H-SiC MOSFETs

〇Yuta Abe¹, Mitsuo Okamoto², Shinobu Onoda³, Takeshi Ohshima³, Moriyoshi Haruyama^3,4, Wataru Kada⁴, Osamu Hanaizumi⁴, Ryoji Kosugi², Shinsuke Harada², Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.QST, 4.Gunma Univ.)

6:15 PM - 6:30 PM

[15p-F204-17] Research on 4H-SiC pMOSFETs with NbNi silicide

〇(M1)Jun Kajihara¹, Shin-Ichiro Kuroki¹, Seiji Ishikawa^1,2, Tomonori Maeda^1,2, Hiroshi Sezaki^1,2, Takamaro Kikkawa¹, Takahiro Makino³, Takeshi Oshima³, Mikael Ostling⁴, Carl-Mikael Zetterling⁴ (1.Hiroshima Univ RNBS., 2.Phenitec Co., 3.QST, 4.KTH)

6:30 PM - 6:45 PM

[15p-F204-18] One dimensional periodic structure of vicinal SiC surface

〇Ryota Koda¹, Kouhei Hukuma¹, Hiroshi Ando¹, Anton Visikovskiy¹, Satoru Tanaka¹ (1.Kyushu Univ.)

6:45 PM - 7:00 PM

[15p-F204-19] N₂ annealing and structural analysis of 4H-SiC m-surfaces

〇Atsushi Shioji¹, Anton Visikovskiy¹, Takashi Kajiwara¹, Satoru Tanaka¹ (1.Kyushu Univ.)

Poster presentation

[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 16, 2017 9:30 AM - 11:30 AM P5 (BP)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[16a-P5-1] Effects of Temperature Differences in Seeding on Crystal Quality in Solution Growth of SiC

〇Naomichi Tsuchimoto¹, Hodaka Kutsukake¹, Koki Suzuki¹, Masaru Takahashi¹, Koangyoung Hyun¹, Toshinori Taishi¹ (1.Shinshu Univ.)

9:30 AM - 11:30 AM

[16a-P5-2] Detection of damaged layers induced during CMP process and linkage analyses of the structure of the damaged layer by MPJ, SEM, AFM, and FIB-STEM

〇Toshiyuki Isshiki¹, Takahiro Sato², Masaki Hasegawa², Atsushi Miyaki², Masato Iyoki², Takehiro Yamaoka², Katsunori Onuki², Kobayashi Kenji² (1.Kyoto Inst. Tech., 2.Hitachi Hightech.)

9:30 AM - 11:30 AM

[16a-P5-3] Dislocation dynamics simulation for shapes of expansion of stacking faults under REDG

〇Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹, Akihiro Goryu², Kenji Hirohata² (1.Univ. of Tokyo, 2.Toshiba R&D Center)

9:30 AM - 11:30 AM

[16a-P5-4] Relationship between Current Density and Stacking Fault Expansion Origin in Forward Degradation of 4H-SiC PiN Diode

〇SHOHEI HAYASHI^1,2, TAMOTSU YAMASHITA^1,3, SENZAKI JUNJI¹, MIYAZATO MASAKI^1,4, RYO MINA^1,4, MASAAKI MIYAJIMA^1,4, YOSHIYUKI YONEZAWA¹, TOMOHISA KATO¹, KAZUTOSHI KOJIMA¹, HAJIME OKUMURA¹ (1.AIST, 2.Toray Research Center Inc., 3.SHOWA DENKO K.K., 4.Fuji Electric Co. Ltd.)

9:30 AM - 11:30 AM

[16a-P5-5] Ti-Si-C Ohmic contact formation by laser annealing on n⁺ 4H-SiC C face

〇Desilva Milantha¹, Teruhisa Kawasaki², Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Sumitomo Heavy Industries Ltd.)

9:30 AM - 11:30 AM

[16a-P5-6] Improvements of 4H-SiC MOS interface with barium

〇Kousuke Muraoka¹, Hiroshi Sezaki^1,2, Seiji Ishikawa^1,2, Tomonori Maeda^1,2, Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Phenitec Semiconductor)

9:30 AM - 11:30 AM

[16a-P5-7] Effects of surface etching with CF₄on 4H-SiC MOS Capacitors

〇(B)Kiichi Kobayakawa¹, Kousuke Muraoka¹, Hiroshi Sezaki^1,2, Seiji Ishikawa^2,1, Tomonori Maeda^2,1, Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Phenitec)

9:30 AM - 11:30 AM

[16a-P5-8] Bias Dependence of Heavy-Ion-Induce Charge Collected from SiC MOSFET

〇Takahiro MAKINO¹, Shuhei TAKANO^1,2, Shinsuke HARADA³, Kazutoshi KOJIMA³, Yasuto HIJIKATA², Takeshi OHSHIMA¹ (1.QST, 2.Saitama Univ., 3.AIST)

9:30 AM - 11:30 AM

[16a-P5-9] Recovery of electrical properties of SiC MOSFETs due to gamma-ray irradiation under high temperature condition

〇Akinori Takeyama¹, Takuma Matsuda^1,2, Satoshi Mitomo^1,2, Koichi Murata^1,2, Takahiro Makino¹, Shinobu Onoda¹, Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Yasuto Hijikata², Takeshi Ohshima¹ (1.QST, 2.Saitama Univ., 3.Sanken Electric Co., Ltd.)

9:30 AM - 11:30 AM

[16a-P5-10] Non-uniform layer near thermal SiO₂/SiC interface and its impact on the leakage characteristics

〇Ryu Nagai¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (1.Univ. of Tsukuba)

9:30 AM - 11:30 AM

[16a-P5-11] Difference between dry-oxide and nitrided SiC-MOS interfaces studied by electrically-detected-magnetic-resonance (EDMR) spectroscopy

〇Takahide Umeda¹, Geonwoo Kim¹, Hironori Yoshioka², Ryouji Kosugi², Shinsuke Harada² (1.Univ. of Tsukuba, 2.AIST)

9:30 AM - 11:30 AM

[16a-P5-12] An analysis of in-plane defect distribution of carbon-related defects in dry-oxide C-face 4H-SiC MOSFET

〇Yohei Kagoyama¹, Mitsuo Okamoto², Hironori Yoshioka², Shinsuke Harada², Takahiro Yamasaki³, Takahisa Ohno³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.NIMS)

9:30 AM - 11:30 AM

[16a-P5-13] Electron-spin-resonance observations on dry-oxide, nitrided, and POCl₃-annealed 4H-SiC/SiO₂ interfaces

〇(M2)Geonwoo Kim¹, Takafumi Okuda², Jun Suda², Tsunenobu Kimoto², Mitsuo Okamoto³, Shinsuke Harada³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.Kyoto Univ., 3.AIST)

9:30 AM - 11:30 AM

[16a-P5-14] Modeling of Busbar Skin Effects in Turn-Off Conditions

〇Koichi Fukuda¹, Junichi Hattori¹, Yoshihiro Sato¹, Hiroshi Sato¹, Hiroshi Yamaguchi¹ (1.AIST)

9:30 AM - 11:30 AM

[16a-P5-15] Integrated Degradation Analysis for SiC Die Attachment Systems subjected to Thermal Cycle Test

〇Mari Yamshita¹, Tatsuhiro Suzuki¹, Sawa Araki¹, Tetsuya Mori¹, Takashi Ogihara², Hidekazu Tanaka², Hisashi Yakumaru³, Satoshi Tanimoto¹ (1.NISSAN ARC, Ltd, 2.Tektronix/Keithley Japan, 3.Hitachi Power Solutions)

Oral presentation

[17a-301-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Mar 17, 2017 9:00 AM - 12:15 PM 301 (301)

Mitsuru Sometani(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[17a-301-1] Characterization of 4H-SiC Wafer and SiO2/SiC Using a Laser Terahertz Emission Microscope

Hidetoshi Nakanishi¹, 〇Tatsuhiko Nishimura¹, Katsuya Fujita¹, Fujikazu Kitamura¹, Minoru Mizubata¹, Iwao Kawayama², Masayoshi Tonouchi² (1.SCREEN, 2.ILE Osaka Univ.)

9:15 AM - 9:30 AM

[17a-301-2] Evaluation of Inhomogeneity of SiO₂/4H-SiC Interface by Conductive Atomic Force Microscopy and Scanning Nonlinear Dielectric Microscopy

〇Yuji Yamagishi¹, Norimichi Chinone¹, Yasuo Cho¹ (1.Res. Inst. of Electrical Commun., Tohoku Univ.)

9:30 AM - 9:45 AM

△ [17a-301-3] Observation of time constant dependence of interface trap distributions using local-DLTS based on scanning nonlinear dielectric microscopy

〇Norimichi Chinone¹, Ryoji Kosugi², Yasunori Tanaka², Shinsuke Harada², Hajime Okumura², Yasuo Cho¹ (1.Tohoku Univ., 2.AIST)

9:45 AM - 10:00 AM

[17a-301-4] First-Principles Molecular Dynamics Simulations of O₂ Oxidation in 4H-SiC/SiO₂
~Electronic Structures of C-related Defects at the Interface Region~

〇Takahiro Yamasaki^1,2, Nobuo Tajima^1,2, Tomoaki Kaneko^1,2, Jun Nara^1,2, Tatsuo Schimizu³, Koichi Kato⁴, Takahisa Ohno^1,2 (1.NIMS, 2.MARCEED, 3.Toshiba R&D Center, 4.IIS, Univ. of Tokyo)

10:00 AM - 10:15 AM

△ [17a-301-5] Thermal oxidation simulation of 4H-SiC by charge-transfer type molecular dynamics

〇(D)So Takamoto¹, Takahiro Yamasaki^2,3, Takahisa Ohno^2,3,4, Chioko Kaneta^3,5, Satoshi Izumi¹, Shinsuke Sakai¹ (1.Univ. of Tokyo, 2.NIMS, 3.MARCEED, 4.IIS, Univ. of Tokyo, 5.Fujitsu Lab.)

10:15 AM - 10:30 AM

△ [17a-301-6] Defect Formation in SiO₂ during the Thermal Oxidation of SiC

〇Kenta Chokawa¹, Masaaki Araidai^1,2, Kenji Shiraishi^1,2 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ.)

10:45 AM - 11:00 AM

[17a-301-7] Evaluation of Filled Defect States for SiO_2/4H-SiC grown by dry and N₂O oxidation

〇Hiromasa Watanabe¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Mori Daisuke², Yutaka Terao², Seiichi Miyazaki¹ (1.Nagoya Univ., 2.Fuji Electric Co., Ltd.)

11:00 AM - 11:15 AM

[17a-301-8] Oxidant concentration at SiO₂/SiC(000-1) Interface during wet oxidation.

〇Naoya Serizawa¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (1.Tsukuba Univ.)

11:15 AM - 11:30 AM

[17a-301-9] Improvement of I-V characteristics by annealing of the oxide films on SiC (000-1) thermally grown in H₂O ambient

〇(M1)Nozomu Iitsuka¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (1.Tsukuba Univ.)

11:30 AM - 11:45 AM

[17a-301-10] Impact of NO POA on leakage current conduction mechanism of thermally grown SiO2 for 4H-SiC C-face substrate

〇Yuji Kiuchi^1,2, Mitsuru Sometani¹, Dai Okamoto³, Tetsuo Hatakeyama¹, Shinsuke Harada¹, Hiroshi Yano³, Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST, 2.New Japan Radio co., 3.Univ. Tsukuba)

11:45 AM - 12:00 PM

[17a-301-11] Anomalous behavior of gate current observed in FN stressed SiC-MOSFETs

Takafumi Furuichi¹, Yoshiki Mihara¹, Kazuki Masuguchi¹, 〇Eiichi Murakami¹ (1.Kyushu Sangyo Univ.)

12:00 PM - 12:15 PM

[17a-301-12] Substrate Effect on Insulating Characteristics of TEOS - CVD - SiO₂ Film

〇Hiroaki Kawamura¹, Kanta Maeda¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (1.Tsukuba Univ.)

Oral presentation

[17p-301-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Mar 17, 2017 1:45 PM - 5:00 PM 301 (301)

Katsuhiro Kutsuki(Toyota)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:15 PM

[17p-301-1] [Kashiko Kodate Award Speech] Study on gate insulator process for reducing on-resistance in SiC trench MOSFET

〇Keiko Ariyoshi¹ (1.TOSHIBA)

2:15 PM - 2:30 PM

[17p-301-2] Impact of wet-oxidation condition on interface state density and bias stress instability of SiO₂/4H-SiC m-face interface formed by dry- and wet-oxidation

Kohei Kuroyama¹, Hirohisa Hirai¹, Kensaku Yamamoto², Mariko Hayashi², Norikazu Hosokawa², 〇Koji Kita¹ (1.Univ. of Tokyo, 2.DENSO CORP.)

2:30 PM - 2:45 PM

△ [17p-301-3] Kinetic difference between the changes of interface defect density and oxide trap density during wet oxidation observed in the grown-thickness dependence of 4H-SiC C-face MOS characteristics

〇Hiroyuki Kajifusa¹, Koji Kita¹ (1.The Univ. of Tokyo)

2:45 PM - 3:00 PM

[17p-301-4] Study on the Effects of Coexisting O₂ on Wet Oxidation of 4H-SiC Si-face Based on the Changes of Oxidation Rate

〇Kei Ishinoda¹, Koji Kita¹ (1.The Univ. of Tokyo)

3:00 PM - 3:15 PM

[17p-301-5] Enhancement of 4H-SiC MOSFET mobility by the near-interface oxide growth in O₂-coexisting H₂O ambient

〇(DC)Hirohisa Hirai¹, Koji Kita¹ (1.The. Univ. of Tokyo)

3:30 PM - 3:45 PM

△ [17p-301-6] Electrical Characteristics of 4H-SiC(0001) MOSFETs with Gate Oxides Formed at Extreme Oxidation Conditions

〇YOSHIHITO KATSU¹, Hidenori Tsuji^1,2, Ayele Kidist Moges¹, Mitsuru Sometani^1,3, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Fuji Electric Co., Ltd., 3.AIST)

3:45 PM - 4:00 PM

△ [17p-301-7] Enhanced oxynitridation at SiC/SiO₂ interface by using rare earth element

〇Ryota Sakuta¹, Hirohisa Hirai¹, Koji Kita¹ (1.The Univ. of Tokyo)

4:00 PM - 4:15 PM

[17p-301-8] Reduction of surface roughness in Ba-enhanced oxidized SiO₂/SiC structures by reducing the amount of Ba and oxidation temperature

〇Eigo Fujita¹, Masato Tanaka¹, Atthawut Chanthaphan¹, Takuji Hosoi¹, Takayoshi Simura¹, Heiji Watanabe¹ (1.Osaka Univ.)

4:15 PM - 4:30 PM

△ [17p-301-9] Reduction of Hall Effect Mobility in SiC MOS Inversion Layer

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Amishiro Hiroyuki¹, Hiroshi Watanabe¹, Shuhei Nakata¹, Takeharu Kuroiwa¹, Koji Kita², Satoshi Yamakawa¹ (1.Mitsubishi Electric, 2.Univ. of Tokyo)

4:30 PM - 4:45 PM

[17p-301-10] Temperature dependence of Hall mobility in SiC MOSFETs

〇Takaaki Amano¹, Dai Okamoto¹, Shinsuke Harada², Tetsuo Hatakeyama², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ.Tsukuba, 2.AIST)

4:45 PM - 5:00 PM

[17p-301-11] Duty ratio dependence of charge pumping characteristics in SiC MOSFETs with nitride gate oxides

〇Xukun Wang¹, Dai Okamoto¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. Tsukuba)

Sessions

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15a-F204-1~12] 15.6 Group IV Compound Semiconductors (SiC)

△ [15a-F204-1] Influence of grwoth temperature on the crystal quality in solution growth of SiC using Cr solvent

△ [15a-F204-3] In situ observation of stacking fault expansion in 4H-SiC by X-ray topography in back reflection geometry

▲ [15a-F204-9] Investigation on the optimal growth region for 4H-SiC CVD trench filling

△ [15a-F204-11] Microscopic FCA measurement for depth-resolved carrier lifetime measurements in SiC

[15p-F204-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[17a-301-1~12] 15.6 Group IV Compound Semiconductors (SiC)

△ [17a-301-3] Observation of time constant dependence of interface trap distributions using local-DLTS based on scanning nonlinear dielectric microscopy

△ [17a-301-5] Thermal oxidation simulation of 4H-SiC by charge-transfer type molecular dynamics

△ [17a-301-6] Defect Formation in SiO2 during the Thermal Oxidation of SiC

[17p-301-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [17p-301-3] Kinetic difference between the changes of interface defect density and oxide trap density during wet oxidation observed in the grown-thickness dependence of 4H-SiC C-face MOS characteristics

△ [17p-301-6] Electrical Characteristics of 4H-SiC(0001) MOSFETs with Gate Oxides Formed at Extreme Oxidation Conditions

△ [17p-301-7] Enhanced oxynitridation at SiC/SiO2 interface by using rare earth element

△ [17p-301-9] Reduction of Hall Effect Mobility in SiC MOS Inversion Layer

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△ [17a-301-6] Defect Formation in SiO₂ during the Thermal Oxidation of SiC

△ [17p-301-7] Enhanced oxynitridation at SiC/SiO₂ interface by using rare earth element