[15a-F204-1~12] 15.6 IV族系化合物（SiC）

▲ [15a-F204-9] Investigation on the optimal growth region for 4H-SiC CVD trench filling

〇紀 世陽¹、小杉 亮治¹、児島 一聡¹、望月 和浩¹、齊藤 新吾¹、松川 康子¹、米澤 喜幸¹、吉田 貞史¹、奥村 元¹ (1.産総研)

キーワード：trench filling, silicon carbide, CVD

For 4H-SiC trench filling growth using HCl, the amount of HCl shows strong influence on filling results. In this work, we tried to outline the defective growth regions and to optimize the condition by investigating the HCl/SiH4 ratio dependent growth map.