[15a-F204-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-F204-8] Rate-Determining Process in Micro-Trench-Filling Epitaxial Growth of 4H-SiC

〇Kazuhiro Mochizuki¹, Shiyang Ji¹, Ryoji Kosugi¹, Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST)

Keywords:Gibbs-Thomson effect, trench, epitaxial growth

Measured dependence of the growth rate on the micro-trench pitch during trench-filling epitaxial gtowth of 4H-SiC has previously been reproduced by assuming vapor-phase-diffusion-limited growth and by taking into account the Gibbs-Thomson effect. This study conducts research on possibilities for the growth being limited by vapor-phase reaction, surface reaction, and surface diffusion. Since these processes are not likely to limit the growth, the assumption is concluded to be reasonable.