[15a-F204-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-F204-2] Crystalline quality of n-type 4H-SiC off-axis substrate by solution growth technique

〇Kazuhiko Kusunoki¹, Kazuaki Seki¹, Yutaka Kishida¹, Hiroshi Kaido¹, Koji Moriguchi¹, Hironori Daikoku², Motohisa Kado², Masayoshi Doi², Katsunori Danno², Akinori Seki², Takayuki Shirai², Hiroaki Saito², Takeshi Bessho² (1.NSSMC, 2.Toyota Motor)

Keywords:SiC