[15a-F204-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-F204-4] SiC solution growth under controlled with the shape of solution by X-ray transmission method

〇Takenobu Sakai¹, Motohisa Kado², Hironori Daikoku², Shunta Harada³, Toru Ujihara³ (1.Nagoya Univ. Inst. of Inno. for Fut. Soc., 2.TOYOTA Mot. Corpo., 3.Nagoya Univ. Inst. of Mate. and Syst. for Susta.)

Keywords:4H-SiC, solution growth, in-situ observation

We have developed in-situ observation techniques by X-ray transmission method during the crystal growth. The observations were carried out from the side of the graphite crucible transmitted through the X-ray under the condition of 80~140 kV×2 mA. Then, we tried to keep the meniscus heights for 2 mm during the crystal growth. Therefore, we have 4H-SiC crystal as a same of seed crystal. This shows that it is effective to make high quality crystals.