[15a-F204-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-F204-5] Mechanism of Replicating Polytype of 4H-SiC by Solution Growth on Concave Surface

〇(D)Hironori Daikoku¹, Sakiko Kawanishi², Takeshi Yoshikawa¹ (1.The Univ. of Tokyo, 2.Tohoku Univ.)

Keywords:solution growth, polytype, sic

A mechanism of Al effect to 4H polytype stability of SiC by solution growth on concave surface was investigated. Carbon solubility in SiCr solvent was not dependent on Al addition.The growth front of grown crystal on concave surface is located in both sides of {1-10m} facet. Al addition into solvent enhances {1-102} stability, resulting in replicating 4H stability of whole crystal.