[15a-F204-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-F204-7] Anti-Corrosion of Pyrolytic Carbon Film for SiC Epitaxial Reactor Cleaning

Kohei Shioda¹, 〇Hitoshi Habuka¹, Hideki Ito², Shin-ichi Mitani², Yoshinao Takahashi³ (1.Yokohama Nat. Univ., 2.NuFlare Technology, 3.Kanto Denka Kogyo)

Keywords:Silicon carbide, Chemical Vapoir Deposition, Reactor cleaning

For developing the cleaning technique applicable for the SiC CVD reactor, the anti-corrosion behavior of pyrolytic carbon film was evaluated. The pyrolytic carbon film surface was evaluated after the exposure to ClF3 gas at higher than 400 oC for various periods. By the conclusions, the cleaning process was designed.