[15a-F204-1~12] 15.6 Group IV Compound Semiconductors (SiC)

▲ [15a-F204-9] Investigation on the optimal growth region for 4H-SiC CVD trench filling

〇Shiyang Ji¹, Ryoji Kosugi¹, Kazutoshi Kojima¹, Kazuhiro Mochizuki¹, Shingo Saito¹, Yoko Matsukawa¹, Yoshiyuki Yonezawa¹, Sadafumi Yoshida¹, Hajime Okumura¹ (1.AIST)

Keywords:trench filling, silicon carbide, CVD

For 4H-SiC trench filling growth using HCl, the amount of HCl shows strong influence on filling results. In this work, we tried to outline the defective growth regions and to optimize the condition by investigating the HCl/SiH4 ratio dependent growth map.