[15a-P8-1~31] 12.1 Fabrications and Structure Controls

[15a-P8-12] Study of optimum spray angle in mist deposition method and fabrication of silicon dioxide films

〇Koki Hiramatsu¹, Sigetaka Katori¹, Masaya Oda², Tosimi Hitora² (1.National Institute of Technology, Tsuyama College, 2.FLOSFIA INC.)

Keywords:Silicon oxide film

A silicon dioxide film is widely used as an insulating film for a gate insulating film of a MOS-FET and plays an important role in the electronic device industry. We have shown that SiO₂ thin films can be formed on glass substrates with ITO at deposition temperature of around 70 ℃ by mist CVD method using polysilazane and hydrogen peroxide solution. In this method, a thin film is formed on the surface of a substrate by flowing source materials gas on a substrate placed in a mold (referred to as a fine channel method). However, with the fine channel method, the size of the substrate depends on the size of the mold, and further it is difficult to form a film in a shape other than a flat plate. Therefore, in this research, in order to solve these problems, we studied film formation by a method (linear source method) of film formation by spraying source material from the nozzle tip. Using diluted polysilazane solution (solvent: butyl acetate) and hydrogen peroxide solution 6% (diluted with distilled water) as source material, 3.0 l / min of carrier gas (N₂), 2.0 l / min of dilution gas (N₂) , the stage was fixed under the conditions of a film forming temperature of 75 ° C and a film forming time of 15 min, and a silicon dioxide film was formed on the glass substrate. It was revealed that a thick film was obtained at the nozzle angle of 25 °.