[15p-301-2~10] The research forefront of plasma processing technology for energy related materials

[15p-301-4] Plasma processing in SiC power devices fabrication

〇Shinsuke Harada¹, Hironori Yoshioka¹, Hidenori Koketsu^1,2, Ryoji Kosugi¹, Tomohisa Kato¹ (1.AIST, 2.Mitsubishi Electric)

Keywords:Silicon carbide, Dry etching, Gate oxide

Silicon carbide (SiC), a wide-gap semiconductor, attracted attention as a next-generation power device material with high efficiency, and the practical application of SiC power devices has already begun. The structure and fabrication process of the SiC power device follows many of Si power devices because SiC can be thermally oxidized and ion implantation doping is possible for both n-type and p-type. However, due to the material properties different from Si, many unique processes have been developed and studied. In this presentation, focusing on the plasma process, we will introduce application examples focusing on our achievements.